IRFP150N - MOSFET N Channel Transistor - TO-247 [Original IRF]

IRFP150N N-Channel Power MOSFET - TO-247 | International Rectifier

The IRFP150N is a high-performance N-Channel Power MOSFET from International Rectifier. It comes in a robust TO-247 package, designed for demanding power applications. Leveraging advanced HEXFET technology, it ensures exceptional efficiency and reliability. This transistor features very low on-state resistance, minimizing power loss. It offers superior switching characteristics with high transconductance. Designers benefit from precise voltage control and very fast switching speeds. Ease of paralleling allows for scalable power solutions. Its remarkable temperature stability ensures consistent performance. This makes it an ideal choice for a wide range of industrial and consumer electronics.

Specifications:

• Drain to Source Voltage (VDS): 100 V
• Continuous Drain Current (ID): 44 A
• Pulsed Drain Current (IDM): 176 A
• Gate to Source Voltage (VGS): ±20 V
• Maximum Power Dissipation (PD): 155 W
• Linear Derating Factor: 1.03 W/°C
• Operating & Storage Temperature (TJ, TSTG): -55 to 150 °C
• Package: TO-247
• Brand/Make: International Rectifier

Key features and benefits:

• Isolated Central Mounting Hole for easy installation
• Enhanced ruggedness with Repetitive Avalanche Ratings
• Reliable switching via Dynamic dv/dt Rating
• Simple Drive Requirements for straightforward circuit design
• Ease of Paralleling for scalable power solutions
• Precise Voltage Control
• Very Fast Switching speeds for high-frequency applications
• Excellent Temperature Stability of electrical parameters

Applications:

• Switching Mode Power Supplies (SMPS)
• Motor Control circuits
• DC-DC Converters
• High-speed switching applications
• Industrial power management systems

Package Includes:

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