IRFP260 MOSFET N Channel Transistor [Original IRF]

IRFP260N N-Channel Power MOSFET Transistor (International Rectifier)

The IRFP260N is a high-performance N-Channel Power MOSFET from International Rectifier. This Fifth Generation HEXFET device is engineered for superior efficiency and reliability. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. Experience fast switching speeds and a ruggedized device design, hallmarks of HEXFET Power MOSFETs. The IRFP260N provides an efficient and reliable solution for a wide variety of power applications. Its TO-247 package is specifically preferred for commercial and industrial settings. This package handles higher power levels where TO-220 devices are insufficient. The TO-247 also offers a superior isolated mounting hole compared to earlier TO-218 packages. This makes the IRFP260N an ideal choice for demanding electronic designs.

Specifications:

• Drain-Source Voltage (Vds): 200V
• Continuous Drain Current (Id): 49A
• On-Resistance (Rds(on)): 0.040 Ohm max
• Power Dissipation (Pd): 300W
• Operating Junction Temperature: -55 to 175°C
• Package Type: TO-247
• Channel Type: N-Channel
• Manufacturer: International Rectifier (Infineon)

Key features and benefits:

• Advanced Process Technology
• Dynamic dv/dt Rating
• 175°C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Ease of Paralleling
• Simple Drive Requirements

Applications:

• High-power switching circuits
• Motor control applications
• DC-DC converters
• Uninterruptible Power Supplies (UPS)
• Industrial power management
• Switch Mode Power Supplies (SMPS)

Package Includes:

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