MOSFET

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IRF9540N (Hexfet Power Mosfet) [Original IRF]

₹32.00

IRF9540N (Hexfet Power Mosfet)   Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the d..

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IRF9640 (MOSFET P Channel Transistor) TO-220 [Original IRF]

₹65.00

IRF9640 (Hexfet Power Mosfet) Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an..

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10N20D (FQP10N20) N-mosfet D 200V 10A [Original] - N-Channel transistor

₹26.00

10N20D MOS 200v N-CHANNEL MOSFET FIELD EFFECT TRANSISTOR WITH INTEGRATED DIODE   The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout t..

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11N65FS (11N65) N-mosfet D 650V 11A [Original] - N-Channel transistor

₹34.00

11N65FS MOS 650v N-CHANNEL MOSFET FIELD EFFECT TRANSISTOR WITH INTEGRATED DIODE   The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout ..

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14N50D (SIHG14N50D) N-mosfet D 500V 14A [Original] - N-Channel transistor

₹32.00

14N50D MOS 500v N-CHANNEL MOSFET FIELD EFFECT TRANSISTOR WITH INTEGRATED DIODE   The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout t..

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15N60C3 N-mosfet D 600V 15A - TO-220 [Original] - N-Channel transistor

₹44.00

15N60 MOS 600v N-CHANNEL MOSFET FIELD EFFECT TRANSISTOR WITH INTEGRATED DIODE   The TO-220 package is universally preferred for all commercial-industrial applications with current of 15A and max voltage 600V. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. ..

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25N10 N-mosfet D 100V 25A [Original] - N-Channel transistor - TO-220 package

₹39.00

2N65F MOS 650v N-CHANNEL MOSFET FIELD EFFECT TRANSISTOR WITH INTEGRATED DIODE   The 25N10 is an N-channel enhancement mode power MOSFET and it uses UTC’s perfect technology to provide designers with fast switching, ruggedized device design, low on-resistance andcost-effectiveness. It is generally suitable for all commercial-industri..

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2N60 N-mosfet D 600V 2A [Original] - N-Channel transistor - TO-220f package

₹21.00

2N60F MOS 600v N-CHANNEL MOSFET FIELD EFFECT TRANSISTOR WITH INTEGRATED DIODE   The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 54 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout th..

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2N60D (2N60F) N-mosfet D 600V 2A [Original] - N-Channel transistor

₹21.00

2N60F MOS 600v N-CHANNEL MOSFET FIELD EFFECT TRANSISTOR WITH INTEGRATED DIODE   The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout th..

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3N65 N-mosfet D 650V 3A [Original] - N-Channel transistor - TO-220f package

₹33.00

3N65F MOS 650v - 3A N-CHANNEL MOSFET FIELD EFFECT TRANSISTOR WITH INTEGRATED DIODE   The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 54 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance througho..

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4N65C (4N65) - 4A, 650V N-Channel, MOSFET [SMD] - TO-263

₹28.00

4N65 - MOSFET N Channel Power Transistor SMD  4N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplie..

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50N60 N-mosfet D 600V 50A - TO-220 [Original] - N-Channel transistor

₹47.00

50N60 MOS 600v N-CHANNEL MOSFET FIELD EFFECT TRANSISTOR WITH INTEGRATED DIODE   The TO-220 package is universally preferred for all commercial-industrial applications with current of 50A and max voltage 600V. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. ..

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5N60 N-mosfet D 600V 5A 48W [Original] - N-Channel transistor

₹40.07

5N60 MOS 600v N-CHANNEL MOSFET FIELD EFFECT TRANSISTOR WITH INTEGRATED DIODE   The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 48 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the..

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60R360P / MMFT60R360P N Channel Mosfet 600v 11A [Original]

₹80.00

60R360P / MMFT60R360P mosfet 600v MOSFET FIELD EFFECT TRANSISTOR WITH INTEGRATED DIODE   The TO-220F package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 31watts. The low thermal resistance and low package cost of the TO-220F contribute to its wide acceptance thr..

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60R580P / MMFT60R580P N Channel Mosfet 600v 8A [Original]

₹80.00

60R580P / MMFT60R580P mosfet 600v MOSFET FIELD EFFECT TRANSISTOR WITH INTEGRATED DIODE   The TO-220F package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 31watts. The low thermal resistance and low package cost of the TO-220F contribute to its wide acceptance thr..

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