IRF9540N (Hexfet Power Mosfet)   Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the d..

IRF9640 (Hexfet Power Mosfet) Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an..

10N20D MOS 200v N-CHANNEL MOSFET FIELD EFFECT TRANSISTOR WITH INTEGRATED DIODE   The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout t..

11N65FS MOS 650v N-CHANNEL MOSFET FIELD EFFECT TRANSISTOR WITH INTEGRATED DIODE   The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout ..

14N50D MOS 500v N-CHANNEL MOSFET FIELD EFFECT TRANSISTOR WITH INTEGRATED DIODE   The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout t..

15N60 MOS 600v N-CHANNEL MOSFET FIELD EFFECT TRANSISTOR WITH INTEGRATED DIODE   The TO-220 package is universally preferred for all commercial-industrial applications with current of 15A and max voltage 600V. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. ..

2N65F MOS 650v N-CHANNEL MOSFET FIELD EFFECT TRANSISTOR WITH INTEGRATED DIODE   The 25N10 is an N-channel enhancement mode power MOSFET and it uses UTC’s perfect technology to provide designers with fast switching, ruggedized device design, low on-resistance andcost-effectiveness. It is generally suitable for all commercial-industri..

2N60F MOS 600v N-CHANNEL MOSFET FIELD EFFECT TRANSISTOR WITH INTEGRATED DIODE   The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 54 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout th..

2N60F MOS 600v N-CHANNEL MOSFET FIELD EFFECT TRANSISTOR WITH INTEGRATED DIODE   The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout th..

3N65F MOS 650v - 3A N-CHANNEL MOSFET FIELD EFFECT TRANSISTOR WITH INTEGRATED DIODE   The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 54 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance througho..

4N65 - MOSFET N Channel Power Transistor SMD  4N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplie..

50N60 MOS 60v N-CHANNEL MOSFET FIELD EFFECT TRANSISTOR WITH INTEGRATED DIODE   The TO-220 package is universally preferred for all commercial-industrial applications with current of 50A and max voltage 60V. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. ..

5N60 MOS 600v N-CHANNEL MOSFET FIELD EFFECT TRANSISTOR WITH INTEGRATED DIODE   The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 48 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the..

60R360P / MMFT60R360P mosfet 600v MOSFET FIELD EFFECT TRANSISTOR WITH INTEGRATED DIODE   The TO-220F package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 31watts. The low thermal resistance and low package cost of the TO-220F contribute to its wide acceptance thr..

60R580P / MMFT60R580P mosfet 600v MOSFET FIELD EFFECT TRANSISTOR WITH INTEGRATED DIODE   The TO-220F package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 31watts. The low thermal resistance and low package cost of the TO-220F contribute to its wide acceptance thr..