IRF9540N (Hexfet Power Mosfet)   Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the d..

06N60C - MOSFET N Channel Power Transistor SMD   Feature Simple Drive Requirement Low Gate Charge Fast Switching RoHS Compliant Package:TO-252 1 Channel   * Image shown is a representation only...

70T03 - MOSFET N Channel Power Transistor Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.   The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low..

100N03 - MOSFET N Channel Power Transistor SMD Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.   The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited fo..

15N10 - MOSFET N Channel Power Transistor SMD Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.   The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for..

50N03 - MOSFET N Channel Power Transistor SMD Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.   The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for..

IRF540N MOSFET - N-Channel Transistor(Hexfet Power Mosfet) Free shipping for >50 Quantity order (only for India) Specifications Drain-Source Volt (Vds): 100V Drain-Gate Volt (Vdg): 100V Gate-Source Volt (Vgs): 20V Drain Current (Id): 30A Power Dissipation (Ptot): 150W Type: N-Channel Applicatio..

IRF9Z34N (P-Channel Power Mosfet) Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extr..

IRFP054N - MOSFET N Channel Power Transistor [International Rectifier] Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know..

IRFP250N - MOSFET N Channel Power Transistor [International Rectifier] The HEXFET technology is the key to international Rectifier's advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest "state of the art" design achieves: very low on-state resistance combined with high transconductances; superio..

IRFP260N - MOSFET N Channel Power Transistor [International Rectifier] Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known fo..

IRFP460 - MOSFET N Channel Power Transistor [International Rectifier] The HEXFET technology is the key to international Rectifier's advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest "state of the art" design achieves: very low on-state resistance combined with high transconductances; superior..

P140NF75 - MOSFET N Channel Power Transistor This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufa..

Heat Sink 40mm - TO-03 Black Anodized Heatsink to dissipate heat from any TO-03 package. Generally used to keep components cool, efficient and increases reliability of the components. Specifications Size : 40mm Color: Black *Image shown is a representation only...

Heat Sink Compound - (Anabond - 652 C) - 100gms Heat Sink Compound’s are single component modified silicone system. This product finds versatile applications like mounting studs of transistors, diodes and silicone rectifies to provide effective heat seal and to improve conductivity at heat sink junctions. Features Suits All T..