IRF9540N (Hexfet Power Mosfet)   Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the d..

IRF9640 (Hexfet Power Mosfet) Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an..

60R360P / MMFT60R360P mosfet 600v MOSFET FIELD EFFECT TRANSISTOR WITH INTEGRATED DIODE   The TO-220F package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 31watts. The low thermal resistance and low package cost of the TO-220F contribute to its wide acceptance thr..

60R580P / MMFT60R580P mosfet 600v MOSFET FIELD EFFECT TRANSISTOR WITH INTEGRATED DIODE   The TO-220F package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 31watts. The low thermal resistance and low package cost of the TO-220F contribute to its wide acceptance thr..

06N60C - MOSFET N Channel Power Transistor SMD   Feature Simple Drive Requirement Low Gate Charge Fast Switching RoHS Compliant Package:TO-252 1 Channel   Note: Equivalent/Compatible for 06N70 * Image shown is a representation only...

70R380P / MMFT70R380P MOSFET 700v MOSFET FIELD EFFECT TRANSISTOR WITH INTEGRATED DIODE   The TO-220F package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 31watts. The low thermal resistance and low package cost of the TO-220F contribute to its wide acceptance thr..

70T03 - MOSFET N Channel Power Transistor Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.   The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low..

7D5N60 MOS 600v N-CHANNEL MOSFET FIELD EFFECT TRANSISTOR WITH INTEGRATED DIODE   The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 48 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout t..

100N03 - MOSFET N Channel Power Transistor SMD Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.   The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited fo..

15N10 - MOSFET N Channel Power Transistor SMD Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.   The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for..

50N03 - MOSFET N Channel Power Transistor SMD Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.   The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for..

IPA60R280 / IPP60R280 mosfet 600v MOSFET FIELD EFFECT TRANSISTOR WITH INTEGRATED DIODE   The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 105 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance thr..

IRF540N MOSFET - N-Channel Transistor(Hexfet Power Mosfet) Free shipping for >50 Quantity order (only for India) Specifications Drain-Source Volt (Vds): 100V Drain-Gate Volt (Vdg): 100V Gate-Source Volt (Vgs): 20V Drain Current (Id): 30A Power Dissipation (Ptot): 150W Type: N-Channel Applicatio..

IRF640N MOSFET - N-Channel Transistor(Hexfet Power Mosfet) Specifications Drain-Source Volt (Vds): 200VDrain-Gate Volt (Vdg): 200VGate-Source Volt (Vgs): 20VDrain Current (Id): 18APower Dissipation (Ptot): 125WType: N-Channel Applications High Current, High Speed Switching Solenoid and Relay Drivers DC-DC ..

IRF9530 (P-Channel Power Mosfet) Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extre..