Transistors
2N2369 NPN switching transistor
2N2369 NPN General Purpose Transistor Features Low current (max. 200 mA) Low voltage (max. 15 V) Applications High-speed switching VHF amplification. * Image shown is a representation only...
DTC114YU - SOT323 (ROHM)
DTC114YU - SOT323- NPN Transistor Features / Specifitaction Transistor Polarity: NPN Collector Emitter Voltage V(br)ceo: 50V Transition Frequency Typ ft: 250MHz Power Dissipation Pd: 200mW DC Collector Current: 100mA DC Current Gain hFE: 68 Operating Temperature Range: -55°C to +150°C Transistor..
DTC124YU - Resistor equipped Transistor (ROHM)
DTC124 - NPN Transistor Features / Specifitaction Transistor Polarity: NPN Collector Emitter Voltage V(br)ceo: 50V Transition Frequency Typ ft: 250MHz DC Collector Current: 100mA DC Current Gain hFE: 68 Operating Temperature Range: -55°C to +150°C To-92 No. of Pins: 3 Current Ic Continuous a Max: ..
IRF9540N (Hexfet Power Mosfet) [Original IRF]
IRF9540N (Hexfet Power Mosfet) Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the d..
IRF9640 (MOSFET P Channel Transistor) [Original IRF]
IRF9640 (Hexfet Power Mosfet) Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an..
MMBTA42 - SMD (MPSA42) - NPN HV video output transistor
MMBTA42 (MPSA42) -HV transistor NPN SMD [High Quality] Feature Collector-Emitter Volt (Vceo): 300V Collector-Base Volt (Vcbo): 300V Collector Current (Ic): 0.5A hfe: 40 @ 10mA Power Dissipation (Ptot): 625mW Current-Gain-Bandwidth (ftotal): 50MHz Type: NPN Package:SOT-23 &..
TL431 : Adjustable Precision Shunt Regulator
TL431 Adjustable Precision Shunt Regulator (Programmable Precision Reference - TL431A) Features Stable Precision 2.5V Reference Programmable Output Voltage to 36V Voltage Reference Tolerance: ±0.4% Low Dynamic Output Impedance Low Output Noise Voltage * Image shown is a representation only...
TL431AC - (SMD/SMT) Adjustable Precision Shunt Regulator
TL431AC - (SMD/SMT) Adjustable Precision Shunt Regulator - [SOIC-8] Features/Specification Output Voltage: Adjustable Initial Accuracy: 1 % Series VREF - Input Voltage - Max: 37 V Shunt Current - Max: 100 mA Maximum Operating Temperature: + 70 C Mounting Style: SMD/SMT Package / Case: SOIC-8 ..
2N2222 NPN (Metal transistor) switching transistors
2N2222 NPN Switching Transistor (PNP complement: 2N2907A) Feature High current (max. 800 mA) Low voltage (max. 40 V). Application Linear amplification and switching. Specification Transistor Polarity: NPN Collector Emitter Voltage V(br)ceo: 30V Power Dissipation Pd: 500mW ..
2N2222 NPN switching transistors
2N2222 NPN Switching Transistor (PNP complement: 2N2907A) Feature High current (max. 800 mA) Low voltage (max. 40 V). Application Linear amplification and switching. Specification Transistor Polarity: NPN Collector Emitter Voltage V(br)ceo: 30V Power Dissipation Pd: 500mW ..
2N3019 NPN Silicon Planar Transistor TO-39 Metal Package
2N3019 NPN Transistor 2N3019 is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through anothe..
2N3055 NPN Power Transistor [Original]
2N3055 NPN Power Transistor Features Collector-Emitter Volt (Vceo): 60V Collector-Base Volt (Vcbo): 100V Collector Current (Ic): 15.0A hfe: 25-70 @ 4000mA Power Dissipation (Ptot): 115W Current-Gain-Bandwidth (ftotal): 2.5MHz Type: NPN *..
2N3904 NPN General Purpose Transistor
2N3904 NPN General Purpose Transistor Collector-Emitter Volt (Vceo): 40V Collector-Base Volt (Vcbo): 60V Collector Current (Ic): 0.2A hfe: 100-300 @ 10mA Power Dissipation (Ptot): 625mW Current-Gain-Bandwidth (ftotal): 300MHz Type: NPN * Image shown is a representation only...
2N3906 PNP General Purpose Transistor (BJT)
2N3906 PNP General Purpose Transistor (Bipolar Junction Transistor) Collector-Emitter Volt (Vceo): 40V Collector-Base Volt (Vcbo): 40V Collector Current (Ic): 0.2A hfe: 100-300 @ 10mA Power Dissipation (Ptot): 625mW Current-Gain-Bandwidth (ftotal): 250MHz Type: NPN Package Type: TO-92 * Image ..
2SA1266 / A1266 - PNP General Purpose Transistor
2SA1266 / A1266 PNP Epitaxial Silicon Transistor Collector-Emitter Volt (Vceo): 50V Collector-Base Volt (Vcbo): 50V Collector Current (Ic): 0.15A hfe: 70-400 @ 2mA Power Dissipation (Ptot): 400mW Current-Gain-Bandwidth (ftotal): 80MHz Type: PNP * Image shown is a representation only...