2N2369 NPN General Purpose Transistor  (Metal) - TO-18 Package Features Low current (max. 200 mA) Low voltage (max. 15 V) Applications High-speed switching VHF amplification. * Image shown is a representation only...

2N2369 NPN General Purpose Transistor Features Low current (max. 200 mA) Low voltage (max. 15 V) Applications High-speed switching VHF amplification. * Image shown is a representation only...

TO-03 Mica Kit setMica Insulation Sheet For Package TO-03 Transistor.Material: Mica SheetPackage contains : 3 set of Mica Kit ( screw, plastic bush, nut and mica sheet).Thin : 0.2mmRoHS Compliant.*Image shown is a representation only...

TO-220 Mica Kit setMica Insulation Sheet For Package TO-220 Transistor.Material: Mica SheetPackage contains : 5 set of Mica Kit ( screw, plastic grip, nut and mica sheet).Thin : 0.2mmRoHS Compliant.*Image shown is a representation only...

TL431 Adjustable Precision Shunt Regulator (Programmable Precision Reference - TL431A) Features Stable Precision 2.5V Reference Programmable Output Voltage to 36V Voltage Reference Tolerance: ±0.4% Low Dynamic Output Impedance Low Output Noise Voltage Package Includes: 5 x TL431* Image shown is a representa..

DTC114YU - SOT323- NPN Transistor Features / Specifitaction Transistor Polarity: NPN Collector Emitter Voltage V(br)ceo: 50V Transition Frequency Typ ft: 250MHz Power Dissipation Pd: 200mW DC Collector Current: 100mA DC Current Gain hFE: 68 Operating Temperature Range: -55°C to +150°C Transistor..

DTC124 - NPN Transistor Features / Specifitaction Transistor Polarity: NPN Collector Emitter Voltage V(br)ceo: 50V Transition Frequency Typ ft: 250MHz DC Collector Current: 100mA DC Current Gain hFE: 68 Operating Temperature Range: -55°C to +150°C To-92 No. of Pins: 3 Current Ic Continuous a Max: ..

IRF9540N (Hexfet Power Mosfet)   Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the d..

IRF9640 (Hexfet Power Mosfet) Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an..

TL431AC - (SMD/SMT) Adjustable Precision Shunt Regulator - [SOIC-8] Features/Specification Output Voltage: Adjustable Initial Accuracy: 1 % Series VREF - Input Voltage - Max: 37 V Shunt Current - Max: 100 mA Maximum Operating Temperature: + 70 C Mounting Style: SMD/SMT Package / Case: SOIC-8 ..

10N20D MOS 200v N-CHANNEL MOSFET FIELD EFFECT TRANSISTOR WITH INTEGRATED DIODE   The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout t..

10pcs: BCX53-16 [SMD] Bipolar (BJT) Single Transistor, PNP, 80 V, 1 A, 500 mW, SOT-89 General description The BCX53-16 is a PNP medium-power Bipolar Transistor suitable for general purposes, driver stages of audio amplifiers applications. Features High collector currentLow collector-emitter saturation voltage-65 to 150°C Junc..

2N2222 NPN Switching Transistor (PZT2222) - pack of 10 Specification Collector-Emitter Volt (Vceo): 40V Collector-Base Volt (Vcbo): 75V Collector Current (Ic): 0.6A hfe: 100-300 @ 150mA Power Dissipation (Ptot): 1.15W Current-Gain-Bandwidth (ftotal): 300MHz Type: NPNPackage: SOT-23Brand: NXP App..

MMBT3904 NPN General Purpose Transistor (Bipolar Junction Transistor) Collector-Emitter Volt (Vceo): 40V Collector-Base Volt (Vcbo): 40V Collector Current (Ic): 0.2A hfe: 100-300 @ 10mA Power Dissipation (Ptot): 250mW Current-Gain-Bandwidth (ftotal): 300MHz Type: NPN Package Type: SOT 23Package incl..

MMBT3906 / 2N3906 PNP General Purpose Transistor (Bipolar Junction Transistor)Specifications: Collector-Emitter Volt (Vceo): 40V Collector-Base Volt (Vcbo): 40V Collector Current (Ic): 0.2A hfe: 100-300 @ 10mA Power Dissipation (Ptot): 150mW Current-Gain-Bandwidth (ftotal): 250MHz Type: PNP Package Type:..