2N2369 NPN General Purpose Transistor Features Low current (max. 200 mA) Low voltage (max. 15 V) Applications High-speed switching VHF amplification. * Image shown is a representation only...

DTC114YU - SOT323- NPN Transistor Features / Specifitaction Transistor Polarity: NPN Collector Emitter Voltage V(br)ceo: 50V Transition Frequency Typ ft: 250MHz Power Dissipation Pd: 200mW DC Collector Current: 100mA DC Current Gain hFE: 68 Operating Temperature Range: -55°C to +150°C Transistor..

DTC124 - NPN Transistor Features / Specifitaction Transistor Polarity: NPN Collector Emitter Voltage V(br)ceo: 50V Transition Frequency Typ ft: 250MHz DC Collector Current: 100mA DC Current Gain hFE: 68 Operating Temperature Range: -55°C to +150°C To-92 No. of Pins: 3 Current Ic Continuous a Max: ..

IRF9540N (Hexfet Power Mosfet)   Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the d..

IRF9640 (Hexfet Power Mosfet) Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an..

MMBTA42 (MPSA42) -HV transistor NPN SMD [High Quality]    Feature Collector-Emitter Volt (Vceo): 300V Collector-Base Volt (Vcbo): 300V Collector Current (Ic): 0.5A hfe: 40 @ 10mA Power Dissipation (Ptot): 625mW Current-Gain-Bandwidth (ftotal): 50MHz Type: NPN Package:SOT-23 &..

TL431 Adjustable Precision Shunt Regulator (Programmable Precision Reference - TL431A) Features Stable Precision 2.5V Reference Programmable Output Voltage to 36V Voltage Reference Tolerance: ±0.4% Low Dynamic Output Impedance Low Output Noise Voltage * Image shown is a representation only...

TL431AC - (SMD/SMT) Adjustable Precision Shunt Regulator - [SOIC-8] Features/Specification Output Voltage: Adjustable Initial Accuracy: 1 % Series VREF - Input Voltage - Max: 37 V Shunt Current - Max: 100 mA Maximum Operating Temperature: + 70 C Mounting Style: SMD/SMT Package / Case: SOIC-8 ..

2N2222 NPN Switching Transistor (PNP complement: 2N2907A) Feature High current (max. 800 mA) Low voltage (max. 40 V). Application Linear amplification and switching. Specification  Transistor Polarity: NPN  Collector Emitter Voltage V(br)ceo: 30V  Power Dissipation Pd: 500mW ..

2N2222 NPN Switching Transistor (PNP complement: 2N2907A) Feature High current (max. 800 mA) Low voltage (max. 40 V). Application Linear amplification and switching. Specification  Transistor Polarity: NPN  Collector Emitter Voltage V(br)ceo: 30V  Power Dissipation Pd: 500mW ..

2N3019 NPN Transistor 2N3019 is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through anothe..

2N3055 NPN Power Transistor Features Collector-Emitter Volt (Vceo): 60V Collector-Base Volt (Vcbo): 100V Collector Current (Ic): 15.0A hfe: 25-70 @ 4000mA Power Dissipation (Ptot): 115W Current-Gain-Bandwidth (ftotal): 2.5MHz Type: NPN   *..

2N3904 NPN General Purpose Transistor Collector-Emitter Volt (Vceo): 40V Collector-Base Volt (Vcbo): 60V Collector Current (Ic): 0.2A hfe: 100-300 @ 10mA Power Dissipation (Ptot): 625mW Current-Gain-Bandwidth (ftotal): 300MHz Type: NPN * Image shown is a representation only...

2N3906 PNP General Purpose Transistor (Bipolar Junction Transistor) Collector-Emitter Volt (Vceo): 40V Collector-Base Volt (Vcbo): 40V Collector Current (Ic): 0.2A hfe: 100-300 @ 10mA Power Dissipation (Ptot): 625mW Current-Gain-Bandwidth (ftotal): 250MHz Type: NPN Package Type: TO-92 * Image ..

2SA1266 / A1266 PNP Epitaxial Silicon Transistor Collector-Emitter Volt (Vceo): 50V Collector-Base Volt (Vcbo): 50V Collector Current (Ic): 0.15A hfe: 70-400 @ 2mA Power Dissipation (Ptot): 400mW Current-Gain-Bandwidth (ftotal): 80MHz Type: PNP * Image shown is a representation only...