2N2369 NPN General Purpose Transistor Features Low current (max. 200 mA) Low voltage (max. 15 V) Applications High-speed switching VHF amplification. * Image shown is a representation only...

DTC114YU - SOT323- NPN Transistor Features / Specifitaction Transistor Polarity: NPN Collector Emitter Voltage V(br)ceo: 50V Transition Frequency Typ ft: 250MHz Power Dissipation Pd: 200mW DC Collector Current: 100mA DC Current Gain hFE: 68 Operating Temperature Range: -55°C to +150°C Transistor..

IRF9540N (Hexfet Power Mosfet)   Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the d..

MMBTA42 (MPSA42) -HV transistor NPN SMD [High Quality]    Feature Collector-Emitter Volt (Vceo): 300V Collector-Base Volt (Vcbo): 300V Collector Current (Ic): 0.5A hfe: 40 @ 10mA Power Dissipation (Ptot): 625mW Current-Gain-Bandwidth (ftotal): 50MHz Type: NPN Package:SOT-23 &..

TL431 Adjustable Precision Shunt Regulator (Programmable Precision Reference - TL431A) Features Stable Precision 2.5V Reference Programmable Output Voltage to 36V Voltage Reference Tolerance: ±0.4% Low Dynamic Output Impedance Low Output Noise Voltage * Image shown is a representation only...

TL431AC - (SMD/SMT) Adjustable Precision Shunt Regulator - [SOIC-8] Features/Specification Output Voltage: Adjustable Initial Accuracy: 1 % Series VREF - Input Voltage - Max: 37 V Shunt Current - Max: 100 mA Maximum Operating Temperature: + 70 C Mounting Style: SMD/SMT Package / Case: SOIC-8 ..

2N2222 NPN Switching Transistor (PNP complement: 2N2907A) Feature High current (max. 800 mA) Low voltage (max. 40 V). Application Linear amplification and switching. Specification  Transistor Polarity: NPN  Collector Emitter Voltage V(br)ceo: 30V  Power Dissipation Pd: 500mW ..

2N2222 NPN Switching Transistor (PNP complement: 2N2907A) Feature High current (max. 800 mA) Low voltage (max. 40 V). Application Linear amplification and switching. Specification  Transistor Polarity: NPN  Collector Emitter Voltage V(br)ceo: 30V  Power Dissipation Pd: 500mW ..

2N3055 NPN Power Transistor Features Collector-Emitter Volt (Vceo): 60V Collector-Base Volt (Vcbo): 100V Collector Current (Ic): 15.0A hfe: 25-70 @ 4000mA Power Dissipation (Ptot): 115W Current-Gain-Bandwidth (ftotal): 2.5MHz Type: NPN   *..

2N3904 NPN General Purpose Transistor Collector-Emitter Volt (Vceo): 40V Collector-Base Volt (Vcbo): 60V Collector Current (Ic): 0.2A hfe: 100-300 @ 10mA Power Dissipation (Ptot): 625mW Current-Gain-Bandwidth (ftotal): 300MHz Type: NPN * Image shown is a representation only...

2N3906 PNP General Purpose Transistor (Bipolar Junction Transistor) Collector-Emitter Volt (Vceo): 40V Collector-Base Volt (Vcbo): 40V Collector Current (Ic): 0.2A hfe: 100-300 @ 10mA Power Dissipation (Ptot): 625mW Current-Gain-Bandwidth (ftotal): 250MHz Type: NPN Package Type: TO-92 * Image ..

2SA1266 / A1266 PNP Epitaxial Silicon Transistor Collector-Emitter Volt (Vceo): 50V Collector-Base Volt (Vcbo): 50V Collector Current (Ic): 0.15A hfe: 70-400 @ 2mA Power Dissipation (Ptot): 400mW Current-Gain-Bandwidth (ftotal): 80MHz Type: PNP * Image shown is a representation only...

06N60C - MOSFET N Channel Power Transistor SMD   Feature Simple Drive Requirement Low Gate Charge Fast Switching RoHS Compliant Package:TO-252 1 Channel   * Image shown is a representation only...

70T03 - MOSFET N Channel Power Transistor Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.   The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low..

BC157 Low Power and General Purpose amplifier Transistor (BC557) Features Maximum collector power dissipation (Pc): 300mW Maximum collector-base voltage (Ucb): 50V Maximum collector-emitter voltage (Uce): 45V Maximum emitter-base voltage (Ueb): 5V Maximum collector current (Ic max): 100mA Maximum junction t..