IRFP460 MOSFET N Channel Transistor [Original IRF]

IRFP460 N-Channel Power MOSFET Transistor - Original International Rectifier

The IRFP460 is a high-performance N-Channel Power MOSFET Transistor, an original component from International Rectifier. It leverages advanced HEXFET technology, a cornerstone of modern power electronics. This design achieves exceptionally low on-state resistance combined with high transconductance, ensuring efficient power conversion. Furthermore, it offers superior reverse energy and diode recovery dv/dt capability, enhancing reliability in demanding circuits. Like all HEXFET transistors, it benefits from voltage control and very fast switching speeds. Ease of paralleling and excellent temperature stability of electrical parameters are also key advantages. This makes the IRFP460 an ideal choice for a wide range of robust power applications requiring high efficiency and reliability.

Specifications:

• Drain-Source Voltage (Vds): 500V
• Gate-Source Voltage (Vgs): 20V
• Continuous Drain Current (Id): 20A
• Total Power Dissipation (Ptot): 280W
• Transistor Type: N-Channel
• Technology: HEXFET
• Manufacturer: International Rectifier (Original IRF)

Key features and benefits:

• Advanced HEXFET Technology for superior performance
• Very low on-state resistance for minimal power loss
• High transconductance for efficient operation
• Superior reverse energy and diode recovery dv/dt capability
• Voltage controlled operation for simplified drive requirements
• Very fast switching speeds for high-frequency applications
• Ease of paralleling for scalable power solutions
• Excellent temperature stability of electrical parameters

Applications:

• Switch-mode power supplies (SMPS)
• Motor control circuits
• DC-DC converters and inverters
• High-speed switching applications
• Uninterruptible Power Supplies (UPS)

Package Includes:

*Image shown is a representation only.

Note: Contact sales(at)electroncomponents.com for bulk enquiry & get best price!