IRFP250N - MOSFET N Channel Transistor IRF250 [Original IRF]

IRFP250N N-Channel MOSFET Power Transistor - Original International Rectifier

The IRFP250N is a high-performance N-Channel MOSFET Power Transistor from International Rectifier. Built with advanced HEXFET technology, it delivers exceptional efficiency and reliability. This transistor features very low on-state resistance, ensuring minimal power loss. Its high transconductance allows for superior switching performance. Designed for robust power applications, the IRFP250N offers excellent reverse energy and diode recovery dv/dt capability. It provides the well-established advantages of MOSFETs, including voltage control and very fast switching speeds. Ease of paralleling and temperature stability further enhance its versatility. Trust the original International Rectifier quality for your critical designs.

Specifications:

• Transistor Type: N-Channel MOSFET
• Part Number: IRFP250N
• Manufacturer: International Rectifier (Original IRF)
• Package Type: TO-247
• Drain-Source Voltage (Vds): 200V
• Continuous Drain Current (Id): 30A @ 25°C
• On-Resistance (Rds(on)): 0.085 Ohm (max)
• Power Dissipation (Pd): 210W
• Operating Temperature: -55°C to +175°C

Key features and benefits:

• Advanced HEXFET technology for superior performance
• Very low on-state resistance for high efficiency
• High transconductance for enhanced switching
• Dynamic dv/dt rating for robust operation
• Repetitive avalanche ratings for reliability
• Simple drive requirements for easy integration
• Ease of paralleling for scalable designs
• Isolated central mounting hole for flexible installation

Applications:

• Switch Mode Power Supplies (SMPS)
• DC-DC Converters
• Motor Control Circuits
• High-Speed Switching Applications
• Uninterruptible Power Supplies (UPS)
• Power Inverters

Package Includes:

*Image shown is a representation only.

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