IRFP150N - MOSFET N Channel Transistor - TO-247 [Original IRF]

IRFP150N N-Channel Power MOSFET Transistor - TO-247 | International Rectifier

The IRFP150N is a high-performance N-Channel Power MOSFET from International Rectifier. Housed in a robust TO-247 package, it's engineered for demanding power applications. Leveraging advanced HEXFET technology, this transistor ensures exceptional efficiency and reliability. It boasts very low on-state resistance, significantly minimizing power loss in your circuits. Designers will appreciate its superior switching characteristics, offering high transconductance and very fast speeds. Benefit from precise voltage control and the ease of paralleling for scalable power solutions. Its remarkable temperature stability guarantees consistent performance across various conditions. This makes the IRFP150N an ideal choice for a wide range of industrial and consumer electronics.

Specifications:

• Drain to Source Voltage (VDS): 100 V
• Continuous Drain Current (ID): 44 A
• Pulsed Drain Current (IDM): 176 A
• Gate to Source Voltage (VGS): ±20 V
• Maximum Power Dissipation (PD): 155 W
• Linear Derating Factor: 1.03 W/°C
• Operating & Storage Temperature (TJ, TSTG): -55 to 150 °C
• Package: TO-247
• Brand/Make: International Rectifier

Key features and benefits:

• Isolated Central Mounting Hole for easy installation
• Enhanced ruggedness with Repetitive Avalanche Ratings
• Reliable switching via Dynamic dv/dt Rating
• Simple Drive Requirements for straightforward circuit design
• Ease of Paralleling for scalable power solutions
• Precise Voltage Control
• Very Fast Switching speeds for high-frequency applications
• Excellent Temperature Stability of electrical parameters

Applications:

• Switching Mode Power Supplies (SMPS)
• Motor Control circuits
• DC-DC Converters
• High-speed switching applications
• Industrial power management systems

Package Includes:

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