7N60C (7N60 : HGT1S7N60ADS) - 7A 600V N-Channel, MOSFET [SMD] - TO-263

7N60C (HGT1S7N60ADS) 7A 600V N-Channel Power MOSFET - TO-263 SMD

The 7N60C (HGT1S7N60ADS) is an N-Channel Power MOSFET. It has a drain current of 7A and a drain-source voltage of 600V. The component is housed in a TO-263 SMD package. It exhibits fast switching times. An ultra-low gate charge of typical 29 nC contributes to efficiency. The device features superior rugged avalanche characteristics. Improved dv/dt capability supports stable operation. This transistor is RoHS compliant. It provides a solution for power management circuits.

Specifications:

• Product Type: N-Channel Power MOSFET
• Part Number: 7N60C (HGT1S7N60ADS)
• Drain Current (ID): 7A
• Drain-Source Voltage (VDS): 600V
• On-State Resistance (RDS(ON)): 1.0Ω (Max) @ VGS = 10V
• Gate Charge (Qg): Typical 29 nC
• Reverse Transfer Capacitance (CRSS): Typical 16pF
• Package Type: TO-263 (SMD)
• Compatibility: Equivalent/Compatible for 7N65

Key features and benefits:

• On-State Resistance (RDS(ON)): 1.0Ω Max
• Gate Charge (Qg): Typical 29 nC
• Fast switching capability
• High ruggedness, avalanche energy tested
• Improved dv/dt capability
• RoHS compliant
• TO-263 SMD package

Applications:

• High-Speed Switching Power Supplies
• Power Adaptors and Chargers
• DC-DC Converters
• Motor Control Circuits
• LED Drivers and Lighting Applications

Frequently Asked Questions:

Q: Is the 7N60C compatible with the 7N65?
A: Yes, the 7N60C (HGT1S7N60ADS) is listed as equivalent/compatible for the 7N65.

Q: What is the package type for this MOSFET?
A: This MOSFET is supplied in a TO-263 (SMD) package.

Q: What is the maximum drain-source voltage for this component?
A: The maximum drain-source voltage (VDS) for the 7N60C is 600V.

Q: What is the typical gate charge (Qg)?
A: The typical gate charge (Qg) for this device is 29 nC.

Package Includes:

*Image shown is a representation only.

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