SMD 2N65 - 650V 2A N-Channel Enhancement Mode Power MOSFET - TO-252 (Dpak)

2N65 650V 2A N-Channel Enhancement Mode Power MOSFET TO-252 (DPAK)

The 2N65 is a high-voltage N-Channel enhancement mode power MOSFET designed for efficient switching in compact SMD designs. With a 650V drain-source voltage rating and 2A continuous drain current capability, it is suitable for offline power supplies, LED drivers, battery chargers, and industrial control circuits. Housed in a TO-252 (DPAK) surface-mount package, it offers good thermal performance and space-saving PCB integration for modern electronic assemblies.

Specifications:

• Drain-Source Voltage (VDSS): 650V
• Continuous Drain Current (ID): 2A
• Pulsed Drain Current (IDM): 8A
• Gate-Source Voltage (VGSS): ±30V
• On-State Resistance (RDS(on)): 4.4Ω at VGS = 10V, ID = 1A
• Total Gate Charge (Qg): 9.0nC (typical)
• Package Type: TO-252 (DPAK)
• Mounting Type: Surface Mount (SMD)
• Compatible/equivalent: 2N60 SMD

Key features and benefits:

• High voltage switching capability
• Low gate charge for fast switching
• Low on-resistance for improved efficiency
• Suitable for high-frequency power circuits
• Compact TO-252 DPAK surface mount package

Applications:

• Switched Mode Power Supplies (SMPS)
• LED driver circuits
• AC-DC power adapters
• Battery chargers
• High-voltage DC-DC converters

Package Includes:

*Image shown is a representation only.

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