IRFP260 MOSFET N Channel Transistor [Original IRF]

IRFP260N N-Channel Power MOSFET Transistor, 200V 49A TO-247

The IRFP260N is a high-performance N-Channel Power MOSFET from International Rectifier, now part of Infineon. This Fifth Generation HEXFET device is engineered for superior efficiency and reliability in demanding power applications. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area, ensuring minimal power loss. Experience fast switching speeds and a ruggedized device design, hallmarks of HEXFET Power MOSFETs. The IRFP260N provides an efficient and reliable solution for a wide variety of power management needs. Its robust TO-247 package is specifically preferred for commercial and industrial settings, handling higher power levels where smaller devices are insufficient. This package also offers a superior isolated mounting hole, making it an ideal choice for demanding electronic designs requiring robust thermal and electrical isolation.

Specifications:

• Drain-Source Voltage (Vds): 200V
• Continuous Drain Current (Id): 49A
• On-Resistance (Rds(on)): 0.040 Ohm max
• Power Dissipation (Pd): 300W
• Operating Junction Temperature: -55 to 175°C
• Package Type: TO-247
• Channel Type: N-Channel
• Manufacturer: International Rectifier (Infineon)

Key features and benefits:

• Advanced Process Technology
• Dynamic dv/dt Rating
• 175°C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Ease of Paralleling
• Simple Drive Requirements

Applications:

• High-power switching circuits
• Motor control applications
• DC-DC converters
• Uninterruptible Power Supplies (UPS)
• Industrial power management
• Switch Mode Power Supplies (SMPS)

Package Includes:

*Image shown is a representation only.

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