IRFP150N - MOSFET N Channel Transistor - TO-247 [Original IRF]

IRFP150N N-Channel Power MOSFET Transistor - TO-247 Package

The IRFP150N is a high-performance N-Channel Power MOSFET from International Rectifier, presented in a robust TO-247 package. It leverages advanced HEXFET technology to deliver exceptional efficiency and reliability for demanding power applications. This transistor features very low on-state resistance, effectively minimizing power loss and enhancing system performance. High transconductance ensures superior switching characteristics. The IRFP150N also offers excellent reverse energy and diode recovery dv/dt capability for robust operation. Designers benefit from its precise voltage control, very fast switching speeds, and ease of paralleling for scalable power solutions. Its remarkable temperature stability ensures consistent performance across varying conditions. This makes it an an ideal choice for a wide range of industrial and consumer electronics.

Specifications:

• Drain to Source Voltage (VDS): 100 V
• Continuous Drain Current (ID): 44 A
• Pulsed Drain Current (IDM): 4A
• Gate to Source Voltage (VGS): ±20 V
• Maximum Power Dissipation (PD): 155 W
• Linear Derating Factor: 1.03 W/°C
• Operating & Storage Temperature (TJ, TSTG): -55 to 150 °C
• Package: TO-247
• Brand/Make: International Rectifier

Key features and benefits:

• Isolated Central Mounting Hole for easy installation
• Enhanced ruggedness with Repetitive Avalanche Ratings
• Reliable switching via Dynamic dv/dt Rating
• Simple Drive Requirements for straightforward circuit design
• Ease of Paralleling for scalable power solutions
• Precise Voltage Control
• Very Fast Switching speeds for high-frequency applications
• Excellent Temperature Stability of electrical parameters

Applications:

• Switching Mode Power Supplies (SMPS)
• Motor Control circuits
• DC-DC Converters
• High-speed switching applications
• Industrial power management systems

Package Includes:

*Image shown is a representation only.

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