IRF840 MOSFET - 500V 8A N-Channel Power MOSFET TO-220 (Original)

IRF840 MOSFET - 500V 8A N-Channel Power MOSFET TO-220 (Original)

The IRF840 N-Channel Power MOSFET is a 500V, 8A device in a TO-220 package. It incorporates advanced planar DMOS technology. This design minimizes on-state resistance. The MOSFET provides fast switching performance. It withstands high energy pulses. The component offers stable and efficient power control. Its drive requirements are simple. This facilitates integration into various circuits.

Specifications:

• Drain-Source Voltage (Vds): 500V
• Drain-Gate Voltage (Vdg): 500V
• Gate-Source Voltage (Vgs): 20V
• Continuous Drain Current (Id): 8.0A
• Total Power Dissipation (Ptot): 125W
• MOSFET Type: N-Channel Enhancement Mode
• Package Type: TO-220
• Technology: Planar DMOS

Key features and benefits:

• Dynamic dV/dt rating
• Repetitive avalanche rated
• Fast switching capabilities
• Minimized on-state resistance
• Simple drive requirements
• Ease of paralleling
• Lead-Free and RoHS Compliant
• Utilizes advanced planar DMOS technology

Applications:

• High-efficiency Switch Mode Power Supplies (SMPS)
• DC-DC converters and inverters
• Motor control circuits
• Power Factor Correction (PFC) circuits
• Electronic lamp ballasts (e.g., half-bridge configurations)
• General purpose power switching applications

Frequently Asked Questions:

Q: What is the package type for the IRF840 MOSFET?
A: The IRF840 MOSFET is supplied in a TO-220 package.

Q: Can the IRF840 MOSFET be used in 500V applications?
A: Yes, the IRF840 MOSFET has a Drain-Source Voltage (Vds) rating of 500V.

Q: What is the continuous drain current rating of this MOSFET?
A: The continuous drain current (Id) for the IRF840 MOSFET is 8.0A.

Package Includes:

*Image shown is a representation only.

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