IRF540N - IRF540 N-Channel MOSFET Transistor (TO-220) [Original - IR]

IRF540N N-Channel Power MOSFET Transistor (TO-220)

The IRF540N is a high-performance N-Channel Power MOSFET, engineered for demanding electronic applications. This robust transistor excels in fast switching and high-power circuits, offering exceptional efficiency. It boasts a low on-resistance of just 0.044Ω, minimizing power loss. With an impressive continuous drain current of 33A, it handles significant loads. Housed in a durable TO-220 package, it ensures superior heat dissipation for sustained reliability. The IRF540N is an ideal choice for motor drivers, power supplies, and DC-DC converters. Its wide operating temperature range guarantees stable performance across diverse environments. Integrate this MOSFET to enhance efficiency and stability in your next design.

Specifications:

• Type: N-Channel Power MOSFET
• Package: TO-220
• Drain-Source Voltage (Vds): 100V
• Continuous Drain Current (Id): 33A
• Pulsed Drain Current: 110A
• Gate Threshold Voltage (Vgs th): 2V – 4V
• On-Resistance (Rds(on)): 0.044Ω (max)
• Power Dissipation (Pd): 150W
• Operating Temperature: -55°C to +175°C

Key features and benefits:

• High-performance N-Channel Power MOSFET for demanding circuits
• Optimized for fast switching and high-efficiency applications
• Ultra-low on-resistance (0.044Ω max) minimizes power loss
• High continuous drain current (33A) and pulsed drain current (110A)
• Robust TO-220 package ensures efficient heat dissipation
• Wide operating temperature range (-55°C to +175°C) for stable operation
• High 100V drain-source voltage capability

Applications:

• Power supply and inverter circuits
• DC-DC converters and switching regulators
• Motor control and driver circuits
• Audio amplifier stages
• General-purpose high-speed switching applications

Package Includes:

*Image shown is a representation only.

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