IRF5305 MOSFET - 55V 31A P-Channel HEXFET Power MOSFET TO-220

IRF5305 P-Channel HEXFET Power MOSFET TO-220

The IRF5305 is a high-performance P-Channel HEXFET Power MOSFET, designed for demanding electronic applications. It comes in a robust TO-220 package, ensuring durability and ease of integration. Utilizing advanced processing techniques, this MOSFET achieves extremely low on-resistance per silicon area. It boasts a drain-source breakdown voltage of -55V and a continuous drain current of -31A. The fast switching speed makes it an excellent choice for efficient power management circuits. Its ruggedized device design ensures exceptional reliability in various operating conditions. This versatile component is suitable for a wide array of electronic circuits. Designers can rely on its efficiency and durability for critical power applications.

Specifications:

• Number of Channels: 1 Channel
• Transistor Polarity: P-Channel
• Drain-Source Breakdown Voltage (Vds): -55V
• Continuous Drain Current (Id): -31A
• Drain-Source Resistance (Rds On): 60mOhms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 63 nC
• Operating Temperature Range: -55 - 175°C
• Power Dissipation (Pd): 110W

Key features and benefits:

• P-Channel HEXFET Power MOSFET
• Extremely Low On-Resistance (60mOhms)
• Fast Switching Speed
• Ruggedized Device Design for enhanced reliability
• High Power Dissipation (110W)
• Wide Operating Temperature Range (-55 to 175°C)
• TO-220 Package for easy mounting and heat dissipation

Applications:

• High Current, High Speed Switching
• Solenoid and Relay Drivers
• DC-DC & DC-AC Converters
• Automotive Environment (Injection, ABS, Air-Bag, Lamp Drivers)

Package Includes:

*Image shown is a representation only.

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