IRF5305 MOSFET - 55V 31A P-Channel HEXFET Power MOSFET TO-220

IRF5305 P-Channel HEXFET Power MOSFET - 55V 31A TO-220

The IRF5305 is a high-performance P-Channel HEXFET Power MOSFET, engineered for demanding electronic applications. It comes in a robust TO-220 package, ensuring both durability and straightforward integration into your circuits. Utilizing advanced processing, this MOSFET achieves extremely low on-resistance per silicon area. It boasts a drain-source breakdown voltage of -55V and a continuous drain current of -31A. Its fast switching speed makes it an excellent choice for efficient power management. The ruggedized device design ensures exceptional reliability across various operating conditions. This versatile component is suitable for a wide array of electronic circuits. Designers can rely on its efficiency and durability for critical power applications.

Specifications:

• Part Number: IRF5305
• Transistor Type: P-Channel MOSFET
• Technology: HEXFET Power MOSFET
• Drain-Source Voltage (Vds): -55V
• Continuous Drain Current (Id): -31A
• Package Type: TO-220
• On-Resistance: Extremely Low
• Switching Speed: Fast

Key features and benefits:

• High-performance P-Channel HEXFET Power MOSFET
• Robust TO-220 package for easy integration
• Extremely low on-resistance per silicon area
• High drain-source breakdown voltage: -55V
• Continuous drain current: -31A
• Fast switching speed for enhanced efficiency
• Ruggedized device design for high reliability
• Suitable for demanding electronic applications

Applications:

• Power management systems
• Motor control circuits
• DC-DC converters
• Switching power supplies
• Load switching applications

Package Includes:

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