13N06 - 60V 13A N-Channel Enhancement Mode Power MOSFET - TO-251

13N06 - 60V 13A N-Channel Enhancement Mode Power MOSFET - TO-251

The 13N06 is a 60V 13A N-Channel Enhancement Mode Power MOSFET. It provides a continuous drain current of 13A. The device is supplied in a compact TO-251 (I-PAK) package. Low on-resistance reduces power losses. Fast switching speeds support high-frequency operations. High avalanche energy strength contributes to device reliability. This MOSFET is suitable for power switching solutions in various circuits.

Specifications:

• Drain-Source Voltage (VDSS): 60V
• Continuous Drain Current (ID): 13.6A
• Pulsed Drain Current (IDM): 54.4A
• Gate-Source Voltage (VGSS): ±20V
• On-Resistance (RDS(on)): 0.11Ω (at VGS = 10V, ID = 6.8A)
• Total Gate Charge (Qg): 4.8nC (typical)
• Package Type: TO-251 (I-PAK)

Key features and benefits:

• Low On-Resistance (RDS(on)) for efficiency and reduced power losses.
• Fast switching speed for high-frequency circuit operations.
• High Avalanche Energy Strength for durability and reliability.
• Compact TO-251 (I-PAK) package for PCB space utilization.
• N-Channel Enhancement Mode for diverse circuit applications.
• 60V Drain-Source Voltage for power handling.
• 13A Continuous Drain Current for consistent operation.

Applications:

• Switching Power Supplies (SMPS).
• DC-DC Converters and voltage regulation.
• Motor control circuits.
• Power management in battery-powered and portable systems.

Frequently Asked Questions:

Q: What is the package type of the 13N06 MOSFET?
A: The 13N06 MOSFET is supplied in a TO-251 (I-PAK) package.

Q: What is the continuous drain current rating for the 13N06?
A: The 13N06 has a continuous drain current (ID) rating of 13.6A.

Q: What is the on-resistance (RDS(on)) of the 13N06?
A: The on-resistance (RDS(on)) of the 13N06 is 0.11Ω at VGS = 10V and ID = 6.8A.

Package Includes:

*Image shown is a representation only.

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