IRF840 MOSFET - 500V 8A N-Channel Power MOSFET TO-220 (Original)

IRF840 MOSFET - 500V 8A N-Channel Power MOSFET TO-220 (Original)

The IRF840 is an N-Channel Power MOSFET. It features a 500V Drain-Source Voltage and an 8A continuous drain current. The device is supplied in a TO-220 package. It utilizes planar DMOS technology. This technology contributes to minimized on-state resistance. The MOSFET exhibits fast switching performance. It is rated for repetitive avalanche and dynamic dV/dt. Simple drive requirements allow for straightforward circuit integration. It is Lead-Free and RoHS Compliant.

Specifications:

• Drain-Source Voltage (Vds): 500V
• Drain-Gate Voltage (Vdg): 500V
• Gate-Source Voltage (Vgs): 20V
• Continuous Drain Current (Id): 8.0A
• Total Power Dissipation (Ptot): 125W
• MOSFET Type: N-Channel Enhancement Mode
• Package Type: TO-220
• Technology: Planar DMOS

Key features and benefits:

• Dynamic dV/dt rating
• Repetitive avalanche rated
• Fast switching capabilities
• Minimized on-state resistance
• Simple drive requirements
• Ease of paralleling
• Lead-Free and RoHS Compliant
• Utilizes advanced planar DMOS technology

Applications:

• High-efficiency Switch Mode Power Supplies (SMPS)
• DC-DC converters and inverters
• Motor control circuits
• Power Factor Correction (PFC) circuits
• Electronic lamp ballasts (e.g., half-bridge configurations)
• General purpose power switching applications

Frequently Asked Questions:

Q: What is the package type for the IRF840 MOSFET?
A: The IRF840 MOSFET is supplied in a TO-220 package.

Q: Can the IRF840 MOSFET be used in 500V applications?
A: Yes, the IRF840 MOSFET has a Drain-Source Voltage (Vds) rating of 500V.

Q: What is the continuous drain current rating of this MOSFET?
A: The continuous drain current (Id) for the IRF840 MOSFET is 8.0A.

Package Includes:

*Image shown is a representation only.

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