IRF640N Power MOSFET TO-220 Package 200V 18A N Channel (Original)

IRF640N Power MOSFET TO-220 Package 200V 18A N-Channel Transistor

The IRF640N is an N-Channel Power MOSFET. It is supplied in a TO-220 package. This device is rated for a maximum drain-source voltage of 200V. It supports a continuous drain current of 18A. The N-channel architecture provides low on-resistance. It also offers fast switching characteristics. Thermal management is facilitated by the TO-220 package. The component operates across a temperature range of -55°C to +175°C. It is utilized in high-power switching and motor control applications.

Specifications:

• Model: IRF640N
• Type: N-Channel Power MOSFET
• Maximum Drain-Source Voltage (Vds): 200V
• Maximum Continuous Drain Current (Id): 18A
• On-Resistance (Rds(on)): < 0.18 Ohms (at Vgs = 10V)
• Gate Threshold Voltage (Vgs(th)): 2-4V
• Total Power Dissipation: 125W
• Package Type: TO-220
• Operating Temperature Range: -55°C to +175°C
• Brand/Make: International Rectifier

Key features and benefits:

• High Voltage Rating: 200V Vds maximum.
• High Current Capability: 18A Id continuous.
• N-Channel Architecture: Low on-resistance and fast switching.
• TO-220 Package: Optimized for thermal dissipation and PCB integration.
• Low Gate Drive Requirements: Compatible with standard logic-level circuits.
• Wide Operating Temperature Range: -55°C to +175°C.
• Robust Construction: Sustained performance in demanding environments.

Applications:

• Motor control and drive circuits.
• DC-DC converters and power supplies.
• Inverters for solar and renewable energy systems.
• High-speed switching applications.
• Audio amplifiers and power management circuits.

Frequently Asked Questions:

Q: Can the IRF640N be used as a direct replacement for other TO-220 MOSFETs?
A: Compatibility depends on matching voltage, current, on-resistance, and gate threshold specifications of the original component.

Q: What is the lead pitch for the TO-220 package of the IRF640N?
A: The standard lead pitch for a TO-220 package is 2.54 mm (0.1 inches).

Q: What is the maximum gate-source voltage (Vgs) for safe operation?
A: The maximum gate-source voltage for the IRF640N is typically ±20V. Exceeding this can damage the gate oxide.

Q: How should the IRF640N be mounted for optimal thermal performance?
A: The TO-220 package requires mounting to a heatsink with thermal paste or a thermal pad to dissipate 125W effectively.

Q: Is the IRF640N suitable for high-frequency switching applications?
A: Yes, its N-channel architecture provides fast switching speeds, making it suitable for high-frequency applications within its power limits.

Package Includes:

*Image shown is a representation only.

Note: Contact sales(at)electroncomponents.com for bulk enquiry & get best price!