GT30F124 / 30F124 Mosfet IGBT - 300V 200A [Original] - Toshiba

Toshiba GT30F124 / 30F124 N-Channel MOSFET IGBT - 300V 200A

The Toshiba GT30F124 / 30F124 is a robust N-Channel MOSFET IGBT designed for demanding power electronics applications. This original Toshiba component offers exceptional performance with a 300V voltage rating and a high 200A collector current. It is engineered for superior efficiency in inverter and power conversion circuits. Benefit from its fast switching capabilities and remarkably low collector-emitter saturation voltage, even under large current conditions. The integrated diode is optimized for specific applications, ensuring reliable operation. Its high input impedance allows for straightforward voltage drives, simplifying circuit design. With a maximum operating temperature of 175°C, this IGBT provides excellent thermal robustness for industrial and consumer electronics.

Specifications:

• Brand: Toshiba
• Model: GT30F124 / 30F124
• Type: N-Channel MOSFET IGBT
• Voltage Rating (Vce): 300V
• Collector Current (Ic): 200A
• Package Type: TO-220SIS
• Max Operating Temperature: 175°C
• Switching Speed: Fast

Key features and benefits:

• Fast switching performance
• Low collector-emitter saturation voltage (Vce(sat))
• Built-in diode with optimized characteristics
• High input impedance for voltage drives
• Extended 175°C operating temperature
• High-voltage (300V) and high-current (200A) ratings
• N-Channel type for versatile applications

Applications:

• Motor driver circuits
• Uninterruptible Power Supply (UPS) systems
• Induction Heating (IH) cookers
• Plasma Display Panels (PDPs)
• Strobe flash units
• General inverter and power conversion systems

Package Includes:

*Image shown is a representation only.

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