• RJP63K2DPP-M0 / RJP63K2 Mosfet IGBT -  630V 40A [Original]
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RJP63K2DPP-M0 / RJP63K2 Mosfet IGBT - 630V 40A [Original]

  • Product Code: MM_RJP63K2
  • Availability: Out Of Stock
  • ₹74.00 (+ GST)

  • 10 or more quantity/sets : ₹72.00
  • 20 or more quantity/sets : ₹69.00

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RJP63K2 MOSFET 630v

Feature

  • Fast switching
  • Low collector-emitter saturation voltage even in the large current area
  • High input impedance allows voltage drives
  • 150°C Operating Temperature

Specification

  • Trench gate and thin wafer technology (G6H-II series)
  • Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ
  • High speed switching: tr = 60 ns typ, tf = 200 ns typ
  • Low leak current: ICES = 1 A max
  • Isolated package TO-220FL
  • Type: N-CHANNEL
  • Voltage : 630V
  • Collector Current: 40A
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