60R580P / MMFT60R580P N Channel Mosfet 600v 8A [Original]

60R580P / MMFT60R580P N-Channel MOSFET 600V 8A TO-220F Power Transistor

The 60R580P / MMFT60R580P is a high-performance N-Channel MOSFET designed for demanding power applications. It boasts a robust 600V drain-source voltage and an 8A drain current capacity. Housed in the efficient TO-220F package, it ensures optimal heat dissipation for sustained operation. This transistor is built with advanced process technology, delivering fast switching speeds crucial for modern electronics. It features a high 175°C operating temperature and full avalanche rating, guaranteeing exceptional reliability. An integrated diode simplifies circuit design and reduces component count. It's an ideal choice for power supplies, motor control, and diverse switching applications requiring robust performance.

Specifications:

• Type Designator: MMIS60R580P
• Marking Code: 60R580P
• Type of Transistor: MOSFET
• Type of Control Channel: N-Channel
• Maximum Power Dissipation (Pd): 70 W
• Maximum Drain-Source Voltage (|Vds|): 600 V
• Maximum Gate-Source Voltage (|Vgs|): 30 V
• Maximum Drain Current (|Id|): 8 A
• Maximum Junction Temperature (Tj): 150 °C
• Rise Time (tr): 34 nS
• Drain-Source Capacitance (Cd): 428 pF
• Maximum Drain-Source On-State Resistance (Rds): 0.53 Ohm

Key features and benefits:

• Advanced process technology for superior performance
• High 175°C operating temperature for robust applications
• Fast switching capabilities for efficient power control
• N-Channel MOSFET design with integrated diode
• Fully avalanche rated for enhanced reliability
• TO-220F package for optimal thermal resistance
• Robust 600V Drain-Source Voltage and 8A Drain Current

Applications:

• Switch Mode Power Supplies (SMPS)
• Motor Control and Drives
• DC-DC Converters
• Lighting Systems (e.g., LED drivers)
• Industrial Power Management

Package Includes:

*Image shown is a representation only.

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