13N06 - 60V 13A N-Channel Enhancement Mode Power MOSFET - TO-251

13N06 - 60V 13A N-Channel Enhancement Mode Power MOSFET (TO-251)

The 13N06 is a robust 60V N-Channel Enhancement Mode Power MOSFET, engineered for superior performance in demanding electronic applications. It features a continuous drain current of 13A, making it suitable for a wide range of power management tasks. Encased in a compact TO-251 (I-PAK) package, this MOSFET is designed to optimize PCB space. Its low on-resistance significantly reduces power losses, leading to improved system efficiency. With fast switching speeds, the 13N06 is ideal for high-frequency operations. This component also boasts high avalanche energy strength, ensuring enhanced durability and reliability in challenging circuit conditions. It's a perfect choice for designers seeking efficient and reliable power switching solutions.

Specifications:

• Drain-Source Voltage (VDSS): 60V
• Continuous Drain Current (ID): 13.6A
• Pulsed Drain Current (IDM): 54.4A
• Gate-Source Voltage (VGSS): ±20V
• On-Resistance (RDS(on)): 0.11Ω (at VGS = 10V, ID = 6.8A)
• Total Gate Charge (Qg): 4.8nC (typical)
• Package Type: TO-251 (I-PAK)

Key features and benefits:

• Low On-Resistance (RDS(on)) for superior efficiency and reduced power losses
• Optimized for fast switching speed in high-frequency circuits
• High Avalanche Energy Strength for enhanced circuit durability and reliability
• Compact TO-251 (I-PAK) package saves valuable PCB space in high-density designs
• N-Channel Enhancement Mode for versatile application in various circuit configurations
• 60V Drain-Source Voltage for robust power handling capabilities
• 13A Continuous Drain Current for reliable and stable operation

Applications:

• Switching Power Supplies (SMPS) for efficient power conversion
• DC-DC Converters and voltage regulation in diverse electronics
• Motor control circuits in industrial and automotive applications
• Efficient power management in battery-powered and portable systems

Package Includes:

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