SMD 2N65 - 650V 2A N-Channel Enhancement Mode Power MOSFET - TO-252 (Dpak)

SMD 2N65 - 650V 2A N-Channel Enhancement Mode Power MOSFET - TO-252 (DPAK)

The SMD 2N65 is a robust N-Channel enhancement mode power MOSFET. It is engineered for efficient high-voltage switching applications. This component features a 650V drain-source voltage rating. It also provides a 2A continuous drain current capability. The 2N65 is ideal for compact SMD designs, including offline power supplies and LED drivers. Its TO-252 (DPAK) surface-mount package ensures excellent thermal performance. This design facilitates space-saving PCB integration. It's a reliable choice for modern electronic assemblies requiring high performance.

Specifications:

• Drain-Source Voltage (VDSS): 650V
• Continuous Drain Current (ID): 2A
• Pulsed Drain Current (IDM): 8A
• Gate-Source Voltage (VGSS): ±30V
• On-State Resistance (RDS(on)): 4.4Ω at VGS = 10V, ID = 1A
• Total Gate Charge (Qg): 9.0nC (typical)
• Package Type: TO-252 (DPAK)
• Mounting Type: Surface Mount (SMD)
• Compatible/equivalent: 2N60 SMD

Key features and benefits:

• High voltage switching capability up to 650V
• Low gate charge (9.0nC typical) for fast switching performance
• Low on-resistance (4.4Ω) for improved power efficiency
• Optimized for high-frequency power circuit applications
• Compact TO-252 (DPAK) surface mount package for space-saving
• Excellent thermal performance for reliable operation
• Ideal for modern electronic assemblies

Applications:

• Switched Mode Power Supplies (SMPS)
• LED driver circuits
• AC-DC power adapters
• Battery chargers
• High-voltage DC-DC converters

Package Includes:

*Image shown is a representation only.

Note: Contact sales(at)electroncomponents.com for bulk enquiry & get best price!