SMD 2N60 - 600V 2A N-Channel Enhancement Mode Power MOSFET - TO-251

SMD 2N60: 600V 2A N-Channel Enhancement Mode Power MOSFET (TO-251)

The SMD 2N60 is a high-performance 600V, 2A N-Channel Enhancement Mode Power MOSFET. It comes in a compact TO-251 package, making it suitable for various space-constrained designs. This robust transistor is engineered for efficient switching applications. It boasts low on-state resistance, which significantly minimizes conduction losses. With its fast switching capabilities, the 2N60 reduces transition losses, enhancing overall system efficiency. Its design ensures reliable operation in demanding high-voltage environments. This MOSFET is an excellent choice for power conversion and control circuits. It delivers stable performance across a wide range of industrial and consumer electronics.

Specifications:

• Drain-Source Voltage (VDSS): 600V
• Continuous Drain Current (ID): 2A
• Pulsed Drain Current (IDM): 8A
• Gate-Source Voltage (VGSS): ±30V
• On-State Resistance (RDS(on)): 4.4Ω at VGS = 10V, ID = 1A
• Total Gate Charge (Qg): 9.0nC (typical)
• Package Type: TO-251 (IPAK)

Key features and benefits:

• High 600V Drain-Source Voltage (VDSS) capability.
• Low On-State Resistance (RDS(on)) for enhanced efficiency.
• Fast switching speed, ideal for rapid power conversion.
• Robust design handles high energy in avalanche and commutation modes.
• N-Channel Enhancement Mode for versatile control.
• Compact TO-251 (IPAK) package for space-saving designs.
• Suitable for high-voltage switching applications.

Applications:

• Switching Power Supplies (SMPS)
• Motor Control systems
• LED Driver and Lighting Systems
• Battery Chargers

Package Includes:

*Image shown is a representation only.

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