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K117 | 2SK117 - N Channel FET ( Vgds = -50V, Pd = 300mW ) - Toshiba
- Product Code: TR-K117-2sk117
- Availability: In Stock
-
₹19.00 (+ GST)
- 10 or more quantity/sets : ₹18.50
- 50 or more quantity/sets : ₹17.50
- 100 or more quantity/sets : ₹16.50
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K117 | 2SK117 - N Channel FET ( Vgds = -50V, Pd = 300mW ) - Toshiba
Features
- Low Noise Audio Amplifier Applications
- High |Yfs|: |Yfs| = 15 mS (typ.) (VDS= 10 V, VGS= 0)
- High breakdown voltage: VGDS= −50 V
- Low noise: NF = 1.0dB (typ.) (VDS= 10 V, ID= 0.5 mA, f = 1 kHz, RG= 1 kΩ)
- High input impedance: IGSS= −1 nA (max) (VGS= −30 V)
Maximum Ratings
- Gate-drain voltage : VGDS = −50 V
- Gate current : IG = 10 mA
- Drain power dissipation : PD = 300 mW
- Junction temperature : Tj = 125 °C
- Storage temperature range : Tstg = −55~125 °C
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