H20R1203 H20R 1203 IGBT power transistor - 20A / 1200V - (Original)

Infineon H20R1203 Original IGBT Power Transistor - 20A / 1200V

The Infineon H20R1203 is an original IGBT power transistor, engineered for high-performance applications. It delivers robust power control with a 20A continuous collector current at 100°C and a 1200V collector-emitter voltage. This makes it ideal for demanding power electronics projects. The component features a powerful monolithic body diode, optimized for soft commutation, ensuring enhanced system reliability. Its low VCEsat and positive temperature coefficient facilitate easy parallel switching, boosting overall efficiency. Expect consistent performance across various environments due to its high ruggedness and temperature-stable behavior. Furthermore, the H20R1203 is JEDEC qualified, Pb-free, and RoHS compliant, meeting modern environmental standards. It's the perfect choice for advanced electronics requiring precise power control and efficiency.

Specifications:

• Brand/Make: Infineon Technologies (Original)
• Collector-Emitter Voltage (VCE): 1200 V
• DC Collector Current (IC): 40A (at 25°C), 20A (at 100°C)
• Gate-Emitter Voltage (VGE): ±20V to ±25V
• VCEsat (Collector-Emitter Saturation Voltage): 1.48V (at 25°C)
• Maximum Junction Temperature (Tvjmax): 175°C

Key features and benefits:

• Original Infineon Technologies component
• Powerful monolithic body diode for soft commutation
• Very tight parameter distribution for consistent performance
• High ruggedness and temperature-stable behavior
• Low VCEsat for enhanced efficiency
• Easy parallel switching capability
• Low Electromagnetic Interference (EMI)
• JEDEC qualified, Pb-free, and RoHS compliant

Applications:

• Inductive cooking systems
• Inverterized microwave ovens
• Resonant converters
• Soft switching power applications
• General electronics projects

Package Includes:

*Image shown is a representation only.

Note: Contact sales(at)electroncomponents.com for bulk enquiry & get best price!