H20R1203 H20R 1203 IGBT power transistor - 20A / 1200V - (Original)

Infineon H20R1203 IGBT Power Transistor - 20A / 1200V

The Infineon H20R1203 is an original IGBT power transistor designed for high-performance applications. This robust component features a 20A continuous collector current at 100°C and a 1200V collector-emitter voltage, making it suitable for demanding power electronics. Engineered for reliability, it boasts a powerful monolithic body diode optimized for soft commutation. Its low VCEsat and positive temperature coefficient ensure easy parallel switching, enhancing system efficiency. With high ruggedness and temperature-stable behavior, the H20R1203 provides consistent performance in various environments. It's also JEDEC qualified, Pb-free, and RoHS compliant, meeting modern environmental standards. Ideal for advanced electronics projects requiring precise power control and efficiency.

Specifications:

• Brand/Make: Infineon Technologies (Original)
• Collector-Emitter Voltage (VCE): 1200 V
• DC Collector Current (IC): 40A (at 25°C), 20A (at 100°C)
• Gate-Emitter Voltage (VGE): ±20V to ±25V
• VCEsat (Collector-Emitter Saturation Voltage): 1.48V (at 25°C)
• Maximum Junction Temperature (Tvjmax): 175°C

Key features and benefits:

• Original Infineon Technologies component
• Powerful monolithic body diode for soft commutation
• Very tight parameter distribution for consistent performance
• High ruggedness and temperature-stable behavior
• Low VCEsat (Collector-Emitter Saturation Voltage)
• Easy parallel switching capability due to positive temperature coefficient
• Low EMI (Electromagnetic Interference)
• JEDEC qualified, Pb-free, and RoHS compliant

Applications:

• Inductive cooking systems
• Inverterized microwave ovens
• Resonant converters
• Soft switching power applications
• General electronics projects

Package Includes:

*Image shown is a representation only.

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