40N120 (MBK40N120 / KGF40N120) IGBT power transistor - 40A / 1200V - (Original)

KEC 40N120 IGBT Power Transistor - 40A / 1200V - Original

The KEC 40N120 is an Insulated Gate Bipolar Transistor (IGBT). It is designed for switching applications in power electronics. This component operates at 40A and 1200V. It incorporates an Ultra Field Stop Trench construction. This design facilitates low on-state voltage and minimal switching loss. A co-packaged soft and fast free-wheeling diode is integrated. The IGBT exhibits high ruggedness and stable temperature behavior. A positive temperature coefficient in VCEsat supports parallel switching. It is JEDEC qualified, Pb-free, and RoHS compliant.

Specifications:

• Type: IGBT Power Transistor
• Model: 40N120 (MBK40N120 / KGF40N120)
• Collector-Emitter Voltage (VCE): 1200 V
• DC Collector Current (IC): 40A (at 100°C), 80A (at 25°C)
• Gate-Emitter Voltage (VGE): ±20V to ±25V
• Collector-Emitter Saturation Voltage (VCEsat): 1.7V (at 25°C)
• Max Junction Temperature (Tvjmax): 175°C
• Construction: Ultra Field Stop Trench
• Diode: Co-packaged soft & fast free-wheeling diode
• Compliance: JEDEC Qualified, Pb-free, RoHS Compliant
• Brand: KEC (Original)

Key features and benefits:

• Ultra Field Stop Trench construction.
• Low on-state voltage (VCEsat) and minimal switching loss.
• Integrated monolithic body diode with low forward voltage for soft commutation.
• High ruggedness and stable behavior across temperatures.
• Positive temperature coefficient in VCEsat for parallel switching.
• Low electromagnetic interference (EMI) design.
• JEDEC-qualified, Pb-free, and RoHS compliant.

Applications:

• Uninterruptible Power Supplies (UPS)
• Solar Inverters
• Welding equipment
• Resonant converters
• Inverterized microwave ovens
• General electronics projects

Frequently Asked Questions:

Q: What is the primary function of the KEC 40N120 IGBT?
A: The KEC 40N120 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications, offering efficient control of electrical power.

Q: What are the key voltage and current ratings for the 40N120 IGBT?
A: This IGBT features a Collector-Emitter Voltage (VCE) of 1200 V and a DC Collector Current (IC) of 40A at 100°C, or 80A at 25°C.

Q: What construction technology does the 40N120 IGBT utilize?
A: The 40N120 IGBT employs an Ultra Field Stop Trench construction, which contributes to its low on-state voltage and minimal switching losses.

Package Includes:

*Image shown is a representation only.

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