40N120 (MBK40N120 / KGF40N120) IGBT power transistor - 40A / 1200V - (Original)

40N120 (MBK40N120 / NGTB40N120) IGBT power transistor - 40A / 1200V - (Original)

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.

Specifications/Feature

• Powerful monolithic body diode with low forward voltage designed for soft commutation only
  
• very tight parameter distribution
• high ruggedness, temperature stable behavior
• lowVCEsat
• easy parallel switching capability due to positive temperature coefficient in VCEsat
• LowEMI
• Qualified according to JEDEC for target applications
• Pb-free lead plating; ROHS complaint
• Collector-emitter voltage VCE: 1200 V
  
• DC collector current,limited by Tvjmax IC: 80A at 25°C and 40A at 100°C
  
• Gate-emitter voltage / Transient Gate-emitter voltage, ) VGE :±20 to ±25volt
  
• VCEsat :1.7V at 25°C
  
• Tvjmax :175°C
• Make/Brand: KEC (Original)

Applications:

• Inverterized microwave ovens
  
• Resonant converters
• Solar Inverter
• Uninterruptible Power Inverter Supplies (UPS)
• Welding
• Electronics Projects
  

* Image shown is a representation only.