60R580P / MMFT60R580P N Channel Mosfet 600v 8A [Original]

60R580P / MMFT60R580P N-Channel MOSFET 600V 8A TO-220F Power Transistor

The 60R580P / MMFT60R580P is an N-Channel MOSFET. It features a 600V drain-source voltage and an 8A drain current capacity. The component is housed in a TO-220F package. This package facilitates heat dissipation. Advanced process technology enables fast switching speeds. The maximum junction temperature is 150°C. This MOSFET includes an integrated diode. It is fully avalanche rated. The on-state resistance is 0.53 Ohm. This device is suitable for power management and switching circuits.

Specifications:

• Type Designator: MMIS60R580P
• Marking Code: 60R580P
• Type of Transistor: MOSFET
• Type of Control Channel: N-Channel
• Maximum Power Dissipation (Pd): 70 W
• Maximum Drain-Source Voltage (|Vds|): 600 V
• Maximum Gate-Source Voltage (|Vgs|): 30 V
• Maximum Drain Current (|Id|): 8 A
• Maximum Junction Temperature (Tj): 150 °C
• Rise Time (tr): 34 nS
• Drain-Source Capacitance (Cd): 428 pF
• Maximum Drain-Source On-State Resistance (Rds): 0.53 Ohm

Key features and benefits:

• Advanced process technology
• 175°C operating temperature
• Fast switching capabilities
• N-Channel MOSFET design with integrated diode
• Fully avalanche rated
• TO-220F package
• 600V Drain-Source Voltage
• 8A Drain Current

Applications:

• Switch Mode Power Supplies (SMPS)
• Motor Control and Drives
• DC-DC Converters
• Lighting Systems (e.g., LED drivers)
• Industrial Power Management

Frequently Asked Questions:

Q: What is the package type of this MOSFET?
A: The 60R580P / MMFT60R580P is supplied in a TO-220F package.

Q: What is the maximum drain-source voltage rating?
A: This MOSFET has a maximum drain-source voltage (|Vds|) of 600 V.

Q: What is the on-state resistance (Rds) of this component?
A: The maximum drain-source on-state resistance (Rds) is 0.53 Ohm.

Q: Does this MOSFET include an integrated diode?
A: Yes, the 60R580P / MMFT60R580P features an integrated diode.

Q: What is the maximum operating junction temperature?
A: The maximum junction temperature (Tj) for this device is 150 °C.

Package Includes:

*Image shown is a representation only.

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