RJP63K2DPP-M0 / RJP63K2 Mosfet IGBT - 630V 40A [Original]

RJP63K2DPP-M0 / RJP63K2 Mosfet IGBT - 630V 40A N-Channel Power Transistor

The RJP63K2DPP-M0 / RJP63K2 Mosfet IGBT is a high-performance N-Channel power transistor. It is engineered for demanding electronic applications requiring robust power conversion. Boasting a 630V voltage rating and a 40A collector current, it offers significant power handling. Advanced trench gate and thin wafer technology ensure superior efficiency and reliability. Experience fast switching speeds and exceptionally low collector-emitter saturation voltage. Its high input impedance simplifies voltage-driven designs. The 150°C operating temperature guarantees stable performance in harsh environments. Housed in an isolated TO-220FL package, it provides enhanced thermal management and safety. This RJP63K2 series is ideal for engineers seeking efficient power switching solutions.

Specifications:

• Technology: Trench gate and thin wafer (G6H-II series)
• Collector to Emitter Saturation Voltage (VCE(sat)): 1.9 V typ
• High Speed Switching (tr): 60 ns typ
• High Speed Switching (tf): 200 ns typ
• Low Leak Current (ICES): 1 A max
• Package Type: Isolated TO-220FL
• Transistor Type: N-CHANNEL
• Voltage Rating: 630V
• Collector Current: 40A

Key features and benefits:

• Fast switching capabilities for efficient operation
• Low collector-emitter saturation voltage (VCE(sat)) even at high currents
• High input impedance, allowing for easy voltage-driven control
• Robust 150°C maximum operating temperature
• Utilizes advanced Trench gate and thin wafer technology (G6H-II series)
• Isolated TO-220FL package for improved thermal performance and safety
• N-Channel type for versatile power switching applications

Applications:

• Power supply units (PSUs)
• Motor control systems (e.g., inverters, variable frequency drives)
• Uninterruptible Power Supplies (UPS)
• Induction heating systems
• Welding equipment
• Solar inverters and renewable energy systems

Package Includes:

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