• K117 | 2SK117 - N Channel FET ( Vgds = -50V, Pd = 300mW ) - Toshiba
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K117 | 2SK117 - N Channel FET ( Vgds = -50V, Pd = 300mW ) - Toshiba

  • Product Code: TR-K117-2sk117
  • Availability: In Stock
  • ₹21.00 (+ GST)

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Toshiba K117 (2SK117) N-Channel FET -50V Vgds, 300mW Pd

The Toshiba K117 (2SK117) is an N-Channel FET. It is specified for low noise audio amplifier applications. This transistor maintains signal integrity in sensitive audio circuits. It features a Gate-Drain Voltage (VGDS) of −50 V. A typical noise figure of 1.0dB is observed. The device exhibits input impedance, reducing loading effects on preceding stages. Its Forward Transfer Admittance (|Yfs|) is 15 mS (typ.). Drain Power Dissipation (PD) is 300 mW. Junction Temperature (Tj) is 125 °C. This component is suitable for audio circuit designs.

Specifications:

  • Gate-Drain Voltage (VGDS): −50 V
  • Gate Current (IG): 10 mA
  • Drain Power Dissipation (PD): 300 mW
  • Junction Temperature (Tj): 125 °C
  • Storage Temperature Range (Tstg): −55~125 °C
  • Noise Figure (NF) (typ.): 1.0dB (VDS= 10 V, ID= 0.5 mA, f = 1 kHz, RG= 1 kΩ)
  • Forward Transfer Admittance (|Yfs|) (typ.): 15 mS (VDS= 10 V, VGS= 0)
  • Gate-Source Leakage Current (IGSS) (max): −1 nA (VGS= −30 V)

Key features and benefits:

  • Low noise audio amplifier application suitability
  • Forward Transfer Admittance (|Yfs|) of 15 mS (typ. at VDS= 10 V, VGS= 0)
  • Gate-Drain Voltage (VGDS) of −50 V
  • Noise Figure (NF) of 1.0dB (typ.)
  • Input impedance with IGSS= −1 nA (max) at VGS= −30 V
  • Drain Power Dissipation (PD) of 300 mW

Applications:

  • High-Fidelity (Hi-Fi) Audio Preamplifiers
  • Microphone Amplifiers and Mixers
  • Sensitive Sensor Interface Circuits
  • Low-Level Signal Amplification
  • Analog Signal Processing

Frequently Asked Questions:

Q: What is the Gate-Drain Voltage (VGDS) for the K117 (2SK117) FET?
A: The Gate-Drain Voltage (VGDS) for the K117 (2SK117) FET is −50 V.

Q: What is the typical Noise Figure (NF) of the K117 (2SK117)?
A: The typical Noise Figure (NF) of the K117 (2SK117) is 1.0dB under specified conditions (VDS= 10 V, ID= 0.5 mA, f = 1 kHz, RG= 1 kΩ).

Q: What is the Drain Power Dissipation (PD) of this N-Channel FET?
A: The Drain Power Dissipation (PD) for the K117 (2SK117) is 300 mW.

Q: What is the Forward Transfer Admittance (|Yfs|) of the K117 (2SK117)?
A: The typical Forward Transfer Admittance (|Yfs|) is 15 mS (VDS= 10 V, VGS= 0).

Package Includes:

1 x K117 | 2SK117 N-Channel FET (Toshiba).

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