K117 | 2SK117 - N Channel FET ( Vgds = -50V, Pd = 300mW ) - Toshiba
- Product Code: TR-K117-2sk117
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Toshiba K117 (2SK117) N-Channel FET -50V Vgds, 300mW Pd
The Toshiba K117 (2SK117) is an N-Channel FET. It is specified for low noise audio amplifier applications. This transistor maintains signal integrity in sensitive audio circuits. It features a Gate-Drain Voltage (VGDS) of −50 V. A typical noise figure of 1.0dB is observed. The device exhibits input impedance, reducing loading effects on preceding stages. Its Forward Transfer Admittance (|Yfs|) is 15 mS (typ.). Drain Power Dissipation (PD) is 300 mW. Junction Temperature (Tj) is 125 °C. This component is suitable for audio circuit designs.
Specifications:
- Gate-Drain Voltage (VGDS): −50 V
- Gate Current (IG): 10 mA
- Drain Power Dissipation (PD): 300 mW
- Junction Temperature (Tj): 125 °C
- Storage Temperature Range (Tstg): −55~125 °C
- Noise Figure (NF) (typ.): 1.0dB (VDS= 10 V, ID= 0.5 mA, f = 1 kHz, RG= 1 kΩ)
- Forward Transfer Admittance (|Yfs|) (typ.): 15 mS (VDS= 10 V, VGS= 0)
- Gate-Source Leakage Current (IGSS) (max): −1 nA (VGS= −30 V)
Key features and benefits:
- Low noise audio amplifier application suitability
- Forward Transfer Admittance (|Yfs|) of 15 mS (typ. at VDS= 10 V, VGS= 0)
- Gate-Drain Voltage (VGDS) of −50 V
- Noise Figure (NF) of 1.0dB (typ.)
- Input impedance with IGSS= −1 nA (max) at VGS= −30 V
- Drain Power Dissipation (PD) of 300 mW
Applications:
- High-Fidelity (Hi-Fi) Audio Preamplifiers
- Microphone Amplifiers and Mixers
- Sensitive Sensor Interface Circuits
- Low-Level Signal Amplification
- Analog Signal Processing
Frequently Asked Questions:
Q: What is the Gate-Drain Voltage (VGDS) for the K117 (2SK117) FET?
A: The Gate-Drain Voltage (VGDS) for the K117 (2SK117) FET is −50 V.
Q: What is the typical Noise Figure (NF) of the K117 (2SK117)?
A: The typical Noise Figure (NF) of the K117 (2SK117) is 1.0dB under specified conditions (VDS= 10 V, ID= 0.5 mA, f = 1 kHz, RG= 1 kΩ).
Q: What is the Drain Power Dissipation (PD) of this N-Channel FET?
A: The Drain Power Dissipation (PD) for the K117 (2SK117) is 300 mW.
Q: What is the Forward Transfer Admittance (|Yfs|) of the K117 (2SK117)?
A: The typical Forward Transfer Admittance (|Yfs|) is 15 mS (VDS= 10 V, VGS= 0).
Package Includes:
1 x K117 | 2SK117 N-Channel FET (Toshiba).*Image shown is a representation only.
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