4N65C (4N65) - 4A, 650V N-Channel, MOSFET [SMD] - TO-263

4N65C (4N65) N-Channel Power MOSFET - 4A, 650V, TO-263 SMD

The 4N65C (4N65) is a robust N-Channel Power MOSFET designed for high-performance applications. It features a 4A current rating and a 650V breakdown voltage, making it suitable for demanding circuits. This SMD component comes in a TO-263 package, ensuring efficient heat dissipation and compact integration. Engineered for superior characteristics, it boasts fast switching times and remarkably low gate charge. Its low on-state resistance enhances efficiency, minimizing power loss. The 4N65C also offers high rugged avalanche characteristics, ensuring reliability in harsh conditions. It's an ideal choice for high-speed switching power supplies and various adapter designs. This MOSFET delivers dependable performance for your electronic projects.

Specifications:

• MOSFET Type: N-Channel
• Drain-Source Voltage (VDS): 650V
• Continuous Drain Current (ID): 4A
• On-State Resistance (RDS(ON)): 1.0Ω @ VGS = 10V
• Gate Charge (Qg): 29 nC (Typical)
• Reverse Transfer Capacitance (CRSS): 16 pF (Typical)
• Switching Speed: Fast
• Avalanche Energy: Tested
• Package Type: TO-263 (SMD)
• Compliance: RoHS Compliant

Key features and benefits:

• Low On-State Resistance: RDS(ON) = 1.0Ω @ VGS = 10V
• Ultra Low Gate Charge (Typical 29 nC)
• Low Reverse Transfer Capacitance (CRSS = typical 16pF)
• Fast Switching Capability
• Avalanche Energy Tested
• Improved dv/dt Capability, High Ruggedness
• RoHS Compliant
• TO-263 Package

Applications:

• Switching Power Supplies
• High-Speed Switching Applications
• Power Adapters
• Motor Control Circuits
• DC-DC Converters

Package Includes:

*Image shown is a representation only.

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