• 40N120 (MBK40N120 / KGF40N120) IGBT power transistor - 40A / 1200V - (Original)
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40N120 (MBK40N120 / KGF40N120) IGBT power transistor - 40A / 1200V - (Original)

  • Product Code: TR-40N120
  • Availability: In Stock
  • ₹155.00 (+ GST)

  • 10 or more quantity/sets : ₹140.00
  • 25 or more quantity/sets : ₹135.00

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Original KEC 40N120 IGBT Power Transistor - 40A / 1200V

This original KEC 40N120 Insulated Gate Bipolar Transistor (IGBT) is engineered for superior performance in demanding switching applications. It features a robust and cost-effective Ultra Field Stop Trench construction. This design ensures both low on-state voltage and minimal switching loss, making it highly efficient. The IGBT is exceptionally well-suited for critical power electronics such as Uninterruptible Power Supplies (UPS) and solar inverter systems. It incorporates a soft and fast co-packaged free-wheeling diode with a low forward voltage, enhancing overall reliability. This component delivers high ruggedness and temperature-stable behavior. Its easy parallel switching capability is due to a positive temperature coefficient in VCEsat. Qualified according to JEDEC standards, it ensures dependable operation in target applications. It is also Pb-free and RoHS compliant.

Specifications:

  • Type: IGBT Power Transistor
  • Model: 40N120 (MBK40N120 / KGF40N120)
  • Collector-Emitter Voltage (VCE): 1200 V
  • DC Collector Current (IC): 40A (at 100°C), 80A (at 25°C)
  • Gate-Emitter Voltage (VGE): ±20V to ±25V
  • Collector-Emitter Saturation Voltage (VCEsat): 1.7V (at 25°C)
  • Max Junction Temperature (Tvjmax): 175°C
  • Construction: Ultra Field Stop Trench
  • Diode: Co-packaged soft & fast free-wheeling diode
  • Compliance: JEDEC Qualified, Pb-free, RoHS Compliant
  • Brand: KEC (Original)

Key features and benefits:

  • Robust Ultra Field Stop Trench construction for superior performance.
  • Achieves low on-state voltage (VCEsat) and minimal switching loss.
  • Features a powerful monolithic body diode with low forward voltage for soft commutation.
  • Ensures high ruggedness and stable behavior across temperatures.
  • Facilitates easy parallel switching due to positive temperature coefficient in VCEsat.
  • Designed for low electromagnetic interference (EMI).
  • JEDEC-qualified and RoHS compliant for reliable, eco-friendly use.

Applications:

  • Uninterruptible Power Supplies (UPS)
  • Solar Inverters
  • Welding equipment
  • Resonant converters
  • Inverterized microwave ovens and general electronics projects

Package Includes:

1 x 40N120 (MBK40N120 / KGF40N120) IGBT Power Transistor.

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