40N120 (MBK40N120 / KGF40N120) IGBT power transistor - 40A / 1200V - (Original)
- Product Code: TR-40N120
- Availability: In Stock
-
₹155.00 (+ GST)
- 10 or more quantity/sets : ₹140.00
- 25 or more quantity/sets : ₹135.00
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Original KEC 40N120 IGBT Power Transistor - 40A / 1200V
This original KEC 40N120 Insulated Gate Bipolar Transistor (IGBT) is engineered for superior performance in demanding switching applications. It features a robust and cost-effective Ultra Field Stop Trench construction. This design ensures both low on-state voltage and minimal switching loss, making it highly efficient. The IGBT is exceptionally well-suited for critical power electronics such as Uninterruptible Power Supplies (UPS) and solar inverter systems. It incorporates a soft and fast co-packaged free-wheeling diode with a low forward voltage, enhancing overall reliability. This component delivers high ruggedness and temperature-stable behavior. Its easy parallel switching capability is due to a positive temperature coefficient in VCEsat. Qualified according to JEDEC standards, it ensures dependable operation in target applications. It is also Pb-free and RoHS compliant.
Specifications:
- Type: IGBT Power Transistor
- Model: 40N120 (MBK40N120 / KGF40N120)
- Collector-Emitter Voltage (VCE): 1200 V
- DC Collector Current (IC): 40A (at 100°C), 80A (at 25°C)
- Gate-Emitter Voltage (VGE): ±20V to ±25V
- Collector-Emitter Saturation Voltage (VCEsat): 1.7V (at 25°C)
- Max Junction Temperature (Tvjmax): 175°C
- Construction: Ultra Field Stop Trench
- Diode: Co-packaged soft & fast free-wheeling diode
- Compliance: JEDEC Qualified, Pb-free, RoHS Compliant
- Brand: KEC (Original)
Key features and benefits:
- Robust Ultra Field Stop Trench construction for superior performance.
- Achieves low on-state voltage (VCEsat) and minimal switching loss.
- Features a powerful monolithic body diode with low forward voltage for soft commutation.
- Ensures high ruggedness and stable behavior across temperatures.
- Facilitates easy parallel switching due to positive temperature coefficient in VCEsat.
- Designed for low electromagnetic interference (EMI).
- JEDEC-qualified and RoHS compliant for reliable, eco-friendly use.
Applications:
- Uninterruptible Power Supplies (UPS)
- Solar Inverters
- Welding equipment
- Resonant converters
- Inverterized microwave ovens and general electronics projects
Package Includes:
1 x 40N120 (MBK40N120 / KGF40N120) IGBT Power Transistor.*Image shown is a representation only.
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