![60R580P / MMFT60R580P N Channel Mosfet 600v 8A [Original]](https://www.electroncomponents.com/image/cache/catalog/components/transistor/to-220f-500x500.jpg "60R580P / MMFT60R580P N Channel Mosfet 600v 8A [Original]")
- Free Shipping on all Orders over Rs.999!!
- Cash On Delivery [COD] only for order above Rs.5000/-
60R580P / MMFT60R580P N Channel Mosfet 600v 8A [Original]
- Product Code: MM_60R580P
- Availability: In Stock
-
₹55.00 (+ GST)
- Shipping Charges Start from Rs.49*
- Fast Order Processing <24hr
- Shipment using reputed courier with 90% delivery in 1 - 3 working days
- All order with GST invoice (B2B: 100% cliam GST credit input tax)
60R580P / MMFT60R580P mosfet 600v
MOSFET FIELD EFFECT TRANSISTOR WITH INTEGRATED DIODE
The TO-220F package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 31watts. The low thermal resistance and low package cost of the TO-220F contribute to its wide acceptance throughout the industry.
Feature
- Advanced Process Technology
- 175°C Operating Temperature
- Fast Switching
- N-Channel
- Fully Avalanche Rated
Specification
- Type Designator: MMIS60R580P
- Marking Code: 60R580P
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 70 W
- Maximum Drain-Source Voltage |Vds|: 600 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Maximum Drain Current |Id|: 8 A
- Maximum Junction Temperature (Tj): 150 °C
- Rise Time (tr): 34 nS
- Drain-Source Capacitance (Cd): 428 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.53 Ohm
Pins : 1. GATE 2. DRAIN 3. SOURCE
* Image shown is a representation only.
Note: Contact sales(at)electroncomponents.com for bulk enquiry & get best price!
![IPA60R280 -E6 / ipp60R280 Mosfet E6 600v 14A 100w [Original] -](https://www.electroncomponents.com/image/cache/catalog/components/transistor/to-220f-200x200.jpg "IPA60R280 -E6 / ipp60R280 Mosfet E6 600v 14A 100w [Original] -")