40N120 (MBK40N120 / KGF40N120) IGBT power transistor - 40A / 1200V - (Original)
- Product Code: TR-40N120
- Availability: In Stock
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₹145.00 (+ GST)
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- 25 or more quantity/sets : ₹135.00
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KEC 40N120 IGBT Power Transistor - 40A / 1200V
The KEC 40N120 is an Insulated Gate Bipolar Transistor (IGBT) designed for switching applications in power electronics. It operates at 40A and 1200V. This component incorporates an Ultra Field Stop Trench construction. This design contributes to low on-state voltage and minimal switching loss. A co-packaged soft and fast free-wheeling diode is integrated. The IGBT exhibits high ruggedness and stable temperature behavior. A positive temperature coefficient in VCEsat supports parallel switching. It is JEDEC qualified, Pb-free, and RoHS compliant.
Specifications:
- Type: IGBT Power Transistor
- Model: 40N120 (MBK40N120 / KGF40N120)
- Collector-Emitter Voltage (VCE): 1200 V
- DC Collector Current (IC): 40A (at 100°C), 80A (at 25°C)
- Gate-Emitter Voltage (VGE): ±20V to ±25V
- Collector-Emitter Saturation Voltage (VCEsat): 1.7V (at 25°C)
- Max Junction Temperature (Tvjmax): 175°C
- Construction: Ultra Field Stop Trench
- Diode: Co-packaged soft & fast free-wheeling diode
- Compliance: JEDEC Qualified, Pb-free, RoHS Compliant
- Brand: KEC (Original)
Key features and benefits:
- Ultra Field Stop Trench construction.
- Low on-state voltage (VCEsat) and minimal switching loss.
- Integrated monolithic body diode with low forward voltage for soft commutation.
- High ruggedness and stable behavior across temperatures.
- Positive temperature coefficient in VCEsat for parallel switching.
- Low electromagnetic interference (EMI) design.
- JEDEC-qualified, Pb-free, and RoHS compliant.
Applications:
- Uninterruptible Power Supplies (UPS)
- Solar Inverters
- Welding equipment
- Resonant converters
- Inverterized microwave ovens
- General electronics projects
Frequently Asked Questions:
Q: What is the purpose of the Ultra Field Stop Trench construction in the 40N120 IGBT?
A: The Ultra Field Stop Trench construction contributes to low on-state voltage (VCEsat) and minimal switching losses in the 40N120 IGBT.
Q: Is the KEC 40N120 suitable for parallel operation?
A: Yes, the KEC 40N120 features a positive temperature coefficient in VCEsat, which supports stable parallel switching.
Q: What are the compliance standards for the KEC 40N120 IGBT?
A: The KEC 40N120 IGBT is JEDEC qualified, Pb-free, and RoHS compliant.
Q: What is the DC Collector Current rating at 25°C versus 100°C?
A: The DC Collector Current (IC) is 80A at 25°C and 40A at 100°C.
Package Includes:
1 x 40N120 (MBK40N120 / KGF40N120) IGBT Power Transistor..*Image shown is a representation only.
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