60R580P / MMFT60R580P N Channel Mosfet 600v 8A [Original]

60R580P / MMFT60R580P N-Channel MOSFET 600V 8A (TO-220F)

The 60R580P / MMFT60R580P is a high-performance N-Channel MOSFET designed for demanding power applications. It boasts a robust 600V drain-source voltage and an 8A drain current capacity. Housed in the widely recognized TO-220F package, this transistor ensures efficient heat dissipation. The TO-220F is universally preferred for commercial-industrial uses up to 31 watts due to its low thermal resistance and cost-effectiveness. Engineered with advanced process technology, it delivers fast switching speeds crucial for modern electronics. With a 175°C operating temperature and full avalanche rating, it guarantees exceptional reliability and durability. This MOSFET also features an integrated diode, simplifying circuit design. It's an ideal choice for power supplies, motor control, and various switching applications.

Specifications:

• Type Designator: MMIS60R580P
• Marking Code: 60R580P
• Type of Transistor: MOSFET
• Type of Control Channel: N-Channel
• Maximum Power Dissipation (Pd): 70 W
• Maximum Drain-Source Voltage (|Vds|): 600 V
• Maximum Gate-Source Voltage (|Vgs|): 30 V
• Maximum Drain Current (|Id|): 8 A
• Maximum Junction Temperature (Tj): 150 °C
• Rise Time (tr): 34 nS
• Drain-Source Capacitance (Cd): 428 pF
• Maximum Drain-Source On-State Resistance (Rds): 0.53 Ohm

Key features and benefits:

• Advanced Process Technology for superior performance
• High 175°C Operating Temperature for robust applications
• Fast Switching capabilities for efficient power control
• N-Channel MOSFET with integrated diode
• Fully Avalanche Rated for enhanced reliability
• TO-220F Package for optimal thermal resistance
• 600V Drain-Source Voltage and 8A Drain Current

Applications:

• Switch Mode Power Supplies (SMPS)
• Motor Control and Drives
• DC-DC Converters
• Lighting Systems (e.g., LED drivers)
• Industrial Power Management

Package Includes:

*Image shown is a representation only.

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