IRF9530 P-Channel Mosfet [Original IRF]

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

 

The IRF9530 is a rugged P-Channel power MOSFET from International Rectifier (IR), designed for high-speed switching and low-loss power control. With a –100V drain-source rating and high current handling, it is ideal for load switching, DC-DC conversion, and reverse polarity protection in both consumer and industrial electronics.

Key features and benefits:

• Original IRF (International Rectifier) component for reliable performance

• P-Channel MOSFET with low R-DS(on) for efficient switching

• TO-220 package with excellent thermal dissipation

• High input impedance and fast switching capability

• Widely used in power control, motor drivers, and battery-powered systems

Applications:

• Reverse polarity protection

• Load and power switching

• DC-DC converters and inverters

• Motor control circuits

• Automotive and battery management systems

Specifications:

• Transistor type: P-Channel Power MOSFET

• Package: TO-220

• Drain-Source Voltage : –100V

• Continuous Drain Current : –14A

• Gate Threshold Voltage : –2V to –4V

• R-DS(on): 0.3Ω max @ V-GS = –10V

• Power dissipation: 110W (at T-C = 25°C)

• Operating temperature: –55°C to +175°C

• Brand: International Rectifier (Original)

 

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