IRF9530 P-Channel Mosfet [Original IRF]

IRF9530 P-Channel Power MOSFET (Original IRF) - High-Speed Switching

The IRF9530 is an original P-Channel Power MOSFET from International Rectifier, renowned for its rugged design and high performance. Utilizing advanced HEXFET technology, it achieves extremely low on-resistance, ensuring efficient power management. This device offers fast switching speeds and robust reliability, making it suitable for demanding electronic applications. With a -100V drain-source rating and -14A continuous drain current, it handles significant power loads. It's an ideal choice for designers seeking an efficient and dependable solution for power control. This MOSFET excels in various circuits, from consumer gadgets to industrial systems.

Specifications:

• Transistor type: P-Channel Power MOSFET
• Package: TO-220
• Drain-Source Voltage: –100V
• Continuous Drain Current: –14A
• Gate Threshold Voltage: –2V to –4V
• R-DS(on): 0.3Ω max @ V-GS = –10V
• Power dissipation: 110W (at T-C = 25°C)
• Operating temperature: –55°C to +175°C
• Brand: International Rectifier (Original)

Key features and benefits:

• Original International Rectifier (IRF) component for assured quality.
• P-Channel Power MOSFET with advanced HEXFET technology.
• Low R-DS(on) (0.3Ω max) for high efficiency and reduced power loss.
• Fast switching speed and high input impedance.
• Ruggedized device design for enhanced reliability.
• TO-220 package for excellent thermal dissipation.
• Wide operating temperature range: -55°C to +175°C.
• High current handling capability (-14A continuous drain current).

Applications:

• Reverse polarity protection circuits.
• Load and power switching applications.
• DC-DC converters and power inverters.
• Motor control and driver circuits.
• Automotive and battery management systems.

Package Includes:

*Image shown is a representation only.

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