BU506DF silicon NPN Power Transistor

BU506DF Silicon NPN Power Transistor with Integrated Diode

The BU506DF is a silicon NPN power transistor. It is designed for high-voltage applications. The transistor features high switching speed. An integrated efficiency diode is included. This component handles power in critical circuits. It operates efficiently with reduced power losses. The BU506DF provides stable and consistent performance. It is used in TV deflection and switch-mode power supplies.

Specifications:

• Collector-Emitter Peak Voltage (VCESM): 1500 V
• Collector-Emitter Voltage (VCEO): 700 V
• Collector-Emitter Saturation Voltage (VCEsat): 1 V (IC=3A, IB=1.33A)
• Diode Forward Voltage (VF): 1.5 - 2.2 V (IF=3A)
• Collector Saturation Current (ICsat): 3 A
• Collector Current (DC): 5 A
• Collector Current (Peak): 8 A
• Total Power Dissipation (Ptot): 20 W (Th ≤ 25 °C)
• Fall Time (tf): 0.7 µs (inductive load)

Key features and benefits:

• High voltage capability
• Fast switching speed
• Integrated efficiency diode
• NPN silicon power transistor
• Reduced power losses
• Stable performance
• Suitable for power applications

Applications:

• Horizontal deflection circuits in color TV receivers
• Line-operated switch-mode power supply (SMPS) applications
• High-voltage switching circuits
• Power conversion systems

Frequently Asked Questions:

Q: What is the maximum collector-emitter peak voltage for the BU506DF?
A: The BU506DF has a Collector-Emitter Peak Voltage (VCESM) of 1500 V.

Q: Can the BU506DF be used in switch-mode power supplies?
A: Yes, the BU506DF is suitable for line-operated switch-mode power supply (SMPS) applications.

Q: Does the BU506DF include an internal diode?
A: Yes, the BU506DF features an integrated efficiency diode.

Package Includes:

*Image shown is a representation only.

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