BU506DF silicon NPN Power Transistor

BU506DF NPN Transistor

• High Voltage
• High Switching Speed
• Built-in Integrated Efficiency Diode

Applications:  Designed for use in horizontal deflection circuits of color TV receivers and in line-operated switch-mode applications

Specification:

• VCESM collector-emitter peak voltage VBE = 0 − 1500 V
• VCEO collector-emitter voltage open base − 700 V
• VCEsat collector-emitter saturation voltage IC = 3 A; IB = 1.33 A; see Figs 7 and 8 − 1 V
• VF diode forward voltage (BU506DF) IF = 3 A 1.5 2.2 V
• ICsat collector saturation current − 3 A
• IC collector current (DC) see Figs 2 and 3 − 5 A
• ICM collector current (peak value) see Figs 2 and 3 − 8 A
• Ptot total power dissipation Th ≤ 25 °C; see Fig.4 − 20 W
• tf fall time inductive load; see Fig.11 0.7 − µs
  

* Image shown is a representation only.