STP55NF06 - MOSFET N-Ch 60 Volt 55 Amp Transistor [Original]

STP55NF06 N-Channel Power MOSFET 60V 50A TO-220 Transistor

The STP55NF06 is an N-Channel Power MOSFET manufactured by STMicroelectronics. It is designed for power management applications. This device utilizes the STripFET process to minimize input capacitance and gate charge. This process supports efficient power designs. It functions as a primary switch in isolated DC-DC converters. Applications include telecom and computer power supply systems. The MOSFET features a 60V Drain-Source Breakdown Voltage and 50A Continuous Drain Current. Its Drain-Source Resistance is 0.018 Ohms. The component is supplied in a TO-220 package and is lead-free and RoHS compliant.

Specifications:

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 60V
• Continuous Drain Current (Id): 50A
• Drain-Source Resistance (Rds On): 0.018 Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 60 nC
• Operating Temperature Range: -55 to 175°C
• Power Dissipation (Pd): 110W
• Package Type: TO-220

Key features and benefits:

• N-Channel Power MOSFET architecture
• 60V Drain-Source Breakdown Voltage (Vds)
• 50A Continuous Drain Current (Id)
• 0.018 Ohms Drain-Source Resistance (Rds On)
• STripFET process for reduced input capacitance and gate charge
• Supplied in a TO-220 package
• Lead-free and RoHS compliant

Applications:

• Isolated DC-DC converters
• Telecom power supply applications
• Computer power supply applications
• Power management circuits requiring low gate charge driving

Frequently Asked Questions:

Q: Can this STP55NF06 MOSFET replace a 60V 55A N-Channel MOSFET?
A: The STP55NF06 is rated for 60V Drain-Source Breakdown Voltage and 50A Continuous Drain Current. Verify the current requirements of the original component for compatibility.

Q: What is the pinout configuration for the TO-220 package of the STP55NF06?
A: Standard TO-220 pinout for MOSFETs typically includes Gate, Drain, and Source. Refer to the STMicroelectronics datasheet for the exact pin assignment for the STP55NF06.

Q: Is the STP55NF06 suitable for high-frequency switching applications?
A: The STripFET process minimizes input capacitance and gate charge, which supports performance in switching applications. Review the datasheet for specific switching characteristics.

Q: What are the thermal considerations for mounting the STP55NF06?
A: The TO-220 package is designed for thermal management. Proper heatsinking is required to maintain the operating temperature within -55 to 175°C, especially at 110W power dissipation.

Q: Does this MOSFET require external gate drive circuitry?
A: The STP55NF06 has a Gate Charge (Qg) of 60 nC and a Gate-Source Voltage (Vgs) of 20V. A suitable gate driver circuit is recommended for optimal switching performance and to meet application requirements.

Package Includes:

*Image shown is a representation only.

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