P80NF55 Power MOSFET (Original)

P80NF55 N-Channel Power MOSFET - 55V, 80A, TO-220

The P80NF55 is an N-channel power MOSFET. It is configured for electronic applications requiring power switching. The device exhibits fast switching speeds and high efficiency. It features an 80A continuous drain current and 0.009 Ohm RDS(on). This characteristic reduces power loss during operation. The TO-220 package facilitates thermal dissipation. A 55V drain-source voltage rating supports various power management requirements. The P80NF55 is applied for power control and efficiency in circuit designs.

Specifications:

• Transistor Type: N-Channel Power MOSFET
• Package: TO-220
• Drain-Source Voltage (VDS): 55V
• Continuous Drain Current (ID): 80A
• Gate Threshold Voltage (VGS(th)): 2V to 4V
• RDS(on): 0.009 Ohm max @ VGS = 10V
• Total Power Dissipation: 300W (at TC = 25°C)
• Operating Temperature: –55°C to +175°C
• Brand: STMicroelectronics or Equivalent

Key features and benefits:

• N-channel MOSFET configuration
• 0.009 Ohm max RDS(on) for reduced power loss
• 80A continuous drain current capability
• 55V Drain-Source Voltage (VDS)
• TO-220 package for thermal dissipation
• Fast switching speed characteristics
• Operating temperature range: –55°C to +175°C

Applications:

• Automotive power systems and electronic control units (ECUs)
• DC motor drivers, solenoid control, and relay replacement
• High-frequency power converters, inverters, and switch-mode power supplies
• Battery-powered equipment and charging circuits
• Industrial and consumer electronics power management solutions

Frequently Asked Questions:

Q: What is the maximum gate-source voltage for the P80NF55?
A: The datasheet specifies a maximum gate-source voltage (VGS) of ±20V.

Q: Can the P80NF55 be used in 24V systems?
A: Yes, with a 55V drain-source voltage rating, it is suitable for 24V applications, ensuring sufficient voltage headroom.

Q: What is the significance of the 0.009 Ohm RDS(on) value?
A: A low RDS(on) minimizes power dissipation and heat generation when the MOSFET is in the ON state, improving efficiency.

Q: Does the TO-220 package require a heatsink?
A: For applications involving high continuous drain currents or power dissipation, a heatsink is necessary to manage thermal performance and prevent overheating.

Package Includes:

*Image shown is a representation only.

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