MJE350 PNP Power Transistor

MJE350 PNP Power Transistor – High Voltage, TO-225 Package

The MJE350 is a robust PNP silicon power transistor designed for reliable performance. It excels in medium-power switching and linear amplification applications. Housed in a durable TO-225 through-hole package, it ensures easy mounting and effective heat dissipation. This transistor is commonly utilized in critical circuits like audio amplifiers and voltage regulators. Its impressive 300V collector-emitter voltage rating makes it suitable for high-voltage designs. The MJE350 provides stability and reliability for demanding power circuit needs. It also serves as a complementary pair to the MJE340 NPN transistor for push-pull configurations.

Specifications:

• Transistor Type: PNP
• Package: TO-225 / TO-126
• Collector-Emitter Voltage (VCEO): 300V
• Collector-Base Voltage (VCBO): 300V
• Emitter-Base Voltage (VEBO): 5V
• Collector Current (IC): 0.5A continuous
• Power Dissipation (PD): Up to 20W (with heatsink)
• DC Current Gain (hFE): 30–240
• Transition Frequency (fT): 4 MHz (typical)
• Operating Temperature: -65°C to +150°C
• RoHS Compliant: Yes

Key features and benefits:

• PNP Power Transistor for linear and switching applications.
• High Voltage Rating: Up to 300V VCEO for demanding circuits.
• Moderate Current Handling: Supports 0.5A continuous collector current.
• TO-225 Through-Hole Package: Ensures easy mounting and efficient heat dissipation.
• Complementary Pair: Designed to work with MJE340 NPN transistor.
• RoHS Compliant: Environmentally friendly component.

Applications:

• Audio amplifier output stages
• Voltage regulation and power control systems
• Inverter and converter circuits
• General-purpose linear and switching applications
• High-voltage DC load management

Package Includes:

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