IRF9Z34N P-Channel Mosfet [Original IRF]

IRF9Z34N P-Channel Power MOSFET - Original IRF

The IRF9Z34N is a robust P-Channel Power MOSFET from Original IRF, engineered for demanding power switching and amplification tasks. It boasts a significant -55V drain-source voltage and handles a continuous drain current of -19A. This makes it an excellent choice for low-voltage, high-efficiency circuit designs. A key feature is its ultra-low 44mΩ on-resistance, which dramatically minimizes power loss and enhances thermal performance. The component is ideally suited for applications such as switch-mode power supplies (SMPS), precise motor controls, and efficient DC-DC converters. Its industry-standard TO-220 package facilitates straightforward mounting and ensures superior heat dissipation. Choose the IRF9Z34N for reliable, high-current performance in your critical electronic projects.

Specifications:

• Brand: IRF Original
• MOSFET Type: P-Channel
• Drain-Source Voltage (Vds): -55V
• Continuous Drain Current (Id): -19A
• Gate Threshold Voltage (Vgs): ±20V
• On-Resistance (RDS(on)): 44mΩ @ -10V Vgs
• Power Dissipation (Pd): 74W
• Package Type: TO-220
• Operating Temperature Range: -55°C to +175°C

Key features and benefits:

• High Continuous Drain Current: Up to -19A for robust power switching.
• Ultra-Low On-Resistance: 44mΩ reduces power loss and boosts efficiency.
• High Voltage Rating: -55V Drain-Source Voltage (Vds) for diverse applications.
• Optimized for Power Circuits: Ideal for switching and amplification tasks.
• TO-220 Package: Ensures efficient heat dissipation and simplified mounting.

Applications:

• DC-DC converters and Switch-Mode Power Supplies (SMPS)
• Battery management systems and motor control circuits
• High-efficiency power regulation
• General load switching and signal amplification

Package Includes:

*Image shown is a representation only.

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