4N65D TO-252 N-Channel Power MOSFET – (DPAK) SMD

4N65D TO-252 N-Channel Power MOSFET (DPAK) SMD

The 4N65D is an N-channel Power MOSFET. It is designed for power switching applications. The component is supplied in a TO-252 (DPAK) surface-mount package. This MOSFET operates with a drain-source voltage of 650V. It is suitable for AC mains-powered systems. An on-resistance of approximately 1.8Ω minimizes conduction losses. Fast switching capabilities support high-frequency power conversion. An integrated gate driver simplifies external circuitry.

Specifications:

• Type: N-Channel Enhancement Mode MOSFET
• Package: TO-252 / DPAK (Surface Mount)
• Drain-Source Voltage (VDS): 650V
• Continuous Drain Current (ID): ~4A (at 25°C, with adequate heatsinking)
• On-Resistance (RDS(on)): ~1.8Ω (typical at VGS = 10V)
• Power Dissipation: ~30W (with proper heatsink)
• Operating Temperature: -55°C to +150°C
• Mounting Type: SMD
• Integrated Diode: Fast-recovery body diode
• RoHS Compliant: Yes

Key features and benefits:

• 650V Drain-Source Voltage (VDS) capability
• TO-252 (DPAK) Surface Mount Device (SMD) package
• Low On-Resistance (RDS(on)) of approximately 1.8Ω
• Fast switching speed
• Integrated gate driver
• N-Channel Enhancement Mode operation
• Operating temperature range from -55°C to +150°C

Applications:

• Off-line Switch-Mode Power Supplies (SMPS)
• LED Driver Circuits
• Battery Chargers
• High-Voltage DC-DC Converters
• Motor Control and Industrial Automation

Frequently Asked Questions:

Q: What is the typical gate-source voltage (VGS) for operating this MOSFET?
A: The typical on-resistance (RDS(on)) is specified at VGS = 10V.

Q: Is the 4N65D suitable for applications requiring less than 650V?
A: Yes, the 4N65D has a drain-source voltage rating of 650V, making it suitable for applications operating below this maximum voltage.

Package Includes:

*Image shown is a representation only.

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