2N60 N-mosfet D 600V 2A [Original] - N-Channel transistor - TO-220f package

2N60 N-Channel MOSFET 600V 2A TO-220f Package Power Transistor

The 2N60 N-Channel MOSFET is a high-performance field-effect transistor engineered for robust power applications. It features a 600V drain-source voltage and a 2A continuous drain current, making it suitable for demanding circuits. Housed in the reliable TO-220f package, it offers excellent thermal resistance and cost-effectiveness. Utilizing advanced process technology, the 2N60 ensures superior performance and reliability. Key benefits include fast switching capabilities and a high maximum operating temperature of 175°C. This transistor is fully avalanche rated, providing enhanced durability and protection against transient voltage spikes. An integrated diode further simplifies circuit design and improves overall system robustness. Its low thermal resistance ensures stable operation even under significant power dissipation, up to 54 watts. Choose the 2N60 for efficient power management in your next electronics project.

Specifications:

• Transistor Type: N-Channel MOSFET
• Drain-Source Voltage (Vds): 600V
• Drain Current (Id): 2A
• Power Dissipation (Pd): 54W
• Package Type: TO-220f
• Max Operating Temperature: 175°C
• Process Technology: Advanced
• Avalanche Rating: Fully Rated
• Integrated Diode: Yes

Key features and benefits:

• Advanced Process Technology for superior performance
• High 175°C maximum operating temperature
• Fast switching capabilities for efficient operation
• N-Channel Field Effect Transistor design
• Fully avalanche rated for enhanced durability
• Integrated diode simplifies circuit design
• Robust TO-220f package with low thermal resistance

Applications:

• Switching Power Supplies
• Motor Control Circuits
• DC-DC Converters
• General Purpose Power Switching
• Commercial and Industrial Power Applications

Package Includes:

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