STP55NF06 - MOSFET N-Ch 60 Volt 55 Amp Transistor [Original]

STP55NF06 N-Channel Power MOSFET - 60V 55A High-Efficiency Transistor

The STP55NF06 is a high-performance N-Channel Power MOSFET from STMicroelectronics. It's engineered for demanding power management applications. This transistor utilizes the advanced STripFET process. This technology significantly minimizes input capacitance and gate charge. The result is boosted overall efficiency in your designs. It serves as an ideal primary switch for sophisticated, high-efficiency isolated DC-DC converters. The MOSFET excels in critical telecom and computer power supply environments. Its low gate charge driving requirements simplify circuit design. This robust 60V, 55A MOSFET comes in a TO-220 package for easy integration. It is also lead-free and fully RoHS compliant.

Specifications:

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 60V
• Continuous Drain Current (Id): 50A
• Drain-Source Resistance (Rds On): 0.018 Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 60 nC
• Operating Temperature Range: -55 to 175°C
• Power Dissipation (Pd): 110W
• Package Type: TO-220

Key features and benefits:

• High-performance N-Channel Power MOSFET
• 60V Drain-Source Breakdown Voltage (Vds)
• Continuous Drain Current (Id) up to 50A
• Ultra-low Drain-Source Resistance (Rds On) of 0.018 Ohms
• STripFET process for minimized input capacitance and gate charge
• Optimized for high-efficiency isolated DC-DC converters
• Robust TO-220 package for easy integration and thermal management
• Lead-free and RoHS compliant

Applications:

• Advanced high-efficiency isolated DC-DC converters
• Telecom power supply applications
• Computer power supply applications
• Power management circuits requiring low gate charge driving

Package Includes:

*Image shown is a representation only.

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