IRF5305 MOSFET - 55V 31A P-Channel HEXFET Power MOSFET TO-220

IRF5305 P-Channel HEXFET Power MOSFET -55V -31A TO-220

The IRF5305 is a P-Channel HEXFET Power MOSFET. It is supplied in a TO-220 package. This MOSFET incorporates advanced processing for low on-resistance per silicon area. It has a drain-source breakdown voltage of -55V. The continuous drain current is -31A. Switching speed is fast. The device design is ruggedized. This component is suitable for various electronic circuits.

Specifications:

• Part Number: IRF5305
• Transistor Type: P-Channel MOSFET
• Technology: HEXFET Power MOSFET
• Drain-Source Voltage (Vds): -55V
• Continuous Drain Current (Id): -31A
• Package Type: TO-220
• On-Resistance: Extremely Low
• Switching Speed: Fast

Key features and benefits:

• P-Channel HEXFET Power MOSFET
• TO-220 package
• Low on-resistance per silicon area
• Drain-source breakdown voltage: -55V
• Continuous drain current: -31A
• Fast switching speed
• Ruggedized device design

Applications:

• Power management systems
• Motor control circuits
• DC-DC converters
• Switching power supplies
• Load switching applications

Frequently Asked Questions:

Q: What is the polarity of the IRF5305 MOSFET?
A: The IRF5305 is a P-Channel MOSFET.

Q: Can the IRF5305 be used in circuits requiring an N-Channel MOSFET?
A: No, the IRF5305 is a P-Channel device and is not a direct substitute for N-Channel MOSFETs due to differing polarity and gate drive requirements.

Q: What is the maximum drain-source voltage for the IRF5305?
A: The maximum drain-source voltage (Vds) for the IRF5305 is -55V.

Q: What is the continuous drain current rating for this MOSFET?
A: The continuous drain current (Id) for the IRF5305 is -31A.

Q: What package type does the IRF5305 come in?
A: The IRF5305 is supplied in a TO-220 package.

Package Includes:

*Image shown is a representation only.

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