BU506DF silicon NPN Power Transistor

BU506DF Silicon NPN Power Transistor with Integrated Diode

The BU506DF is a robust silicon NPN power transistor designed for demanding high-voltage applications. It offers exceptional performance with its high switching speed and integrated efficiency diode. This component is specifically engineered to excel in critical circuits requiring reliable power handling. Its advanced design ensures efficient operation and reduced power losses. Ideal for professionals and hobbyists seeking a high-quality transistor for their projects. This versatile component provides stable and consistent performance across various operating conditions. Trust the BU506DF for your next power electronics design.

Specifications:

• VCESM collector-emitter peak voltage (VBE = 0): 1500 V
• VCEO collector-emitter voltage (open base): 700 V
• VCEsat collector-emitter saturation voltage (IC = 3 A; IB = 1.33 A): 1 V
• VF diode forward voltage (IF = 3 A): 1.5 - 2.2 V
• ICsat collector saturation current: 3 A
• IC collector current (DC): 5 A
• ICM collector current (peak value): 8 A
• Ptot total power dissipation (Th ≤ 25 °C): 20 W
• tf fall time (inductive load): 0.7 µs

Key features and benefits:

• High Voltage Capability
• Fast Switching Speed
• Built-in Integrated Efficiency Diode
• NPN Silicon Power Transistor
• Optimized for demanding power applications
• Robust and reliable performance

Applications:

• Horizontal deflection circuits in color TV receivers
• Line-operated switch-mode power supply applications
• High-voltage switching circuits
• Power conversion systems

Package Includes:

*Image shown is a representation only.

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