5N60 N-mosfet D 600V 5A 48W [Original] - N-Channel transistor

5N60 N-Channel MOSFET Power Transistor 600V 5A 48W TO-220

The 5N60 N-Channel MOSFET is a high-performance field-effect transistor engineered for demanding power applications. It boasts a robust 600V drain-source voltage rating and a 5A continuous drain current. This device efficiently handles significant power dissipation up to 48W, housed in the widely preferred TO-220 package. Designed with advanced process technology, the 5N60 ensures fast switching capabilities for optimal efficiency. It incorporates an integrated diode, enhancing its versatility in various circuit designs. Fully avalanche rated, this MOSFET provides added durability and safety in harsh conditions. Its high 175°C operating temperature guarantees reliable performance in challenging environments. The 5N60 is an ideal choice for commercial and industrial power management solutions requiring robust and efficient switching.

Specifications:

• Transistor Type: N-Channel MOSFET
• Drain-Source Voltage (Vds): 600V
• Drain Current (Id): 5A
• Total Power Dissipation (Pd): 48W
• Package Type: TO-220
• Operating Temperature: Up to 175°C
• Pin Configuration: 1. GATE, 2. DRAIN, 3. SOURCE

Key features and benefits:

• Advanced Process Technology for superior performance
• High 175°C Operating Temperature for reliability
• Fast Switching capabilities for efficient operation
• N-Channel Field Effect Transistor design
• Fully Avalanche Rated for enhanced ruggedness
• Integrated Diode for versatile circuit applications
• TO-220 Package with low thermal resistance

Applications:

• Switching Power Supplies
• Motor Control Circuits
• DC-DC Converters
• Industrial Power Management
• Lighting Ballasts
• High-Speed Switching Applications

Package Includes:

*Image shown is a representation only.

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