4N65 N-mosfet D 650V 4A [Original] - N-Channel transistor - TO-220f package

4N65 N-Channel MOSFET D 650V 4A TO-220f Power Transistor

The 4N65 N-Channel MOSFET is a high-performance field-effect transistor designed for demanding power applications. This robust component features a breakdown voltage of 650V and a continuous drain current of 4A, making it suitable for various industrial and commercial uses. Housed in the widely accepted TO-220f package, it offers excellent thermal resistance and cost-effectiveness. Engineered with advanced process technology, the 4N65 ensures fast switching speeds and reliable operation even at temperatures up to 175°C. Its integrated diode further enhances circuit protection and efficiency. This fully avalanche-rated transistor provides stable and efficient power management solutions for your electronic designs.

Specifications:

• Transistor Type: N-Channel MOSFET
• Drain-Source Voltage (Vds): 650V
• Continuous Drain Current (Id): 4A
• Total Power Dissipation (Pd): 54W
• Package Type: TO-220f
• Operating Temperature: -55°C to 175°C
• Switching Speed: Fast
• Integrated Diode: Yes
• Process Technology: Advanced

Key features and benefits:

• Advanced Process Technology
• 175°C Operating Temperature
• Fast Switching Capability
• N-Channel Enhancement Mode
• Fully Avalanche Rated
• Integrated Diode for Enhanced Protection
• Low Thermal Resistance (TO-220f package)
• Cost-Effective TO-220f Package

Applications:

• Switching Power Supplies (SMPS)
• Motor Control Circuits
• Lighting Ballasts
• DC-DC Converters
• Industrial Power Management
• High-Speed Switching Applications

Package Includes:

*Image shown is a representation only.

Note: Contact sales(at)electroncomponents.com for bulk enquiry & get best price!