2N3019 NPN Silicon Planar Transistor TO-39 Metal Package

2N3019 NPN Silicon Planar Transistor TO-39 Metal Package

The 2N3019 is a high-performance NPN silicon planar transistor designed for a wide range of electronic applications. Encased in a durable TO-39 metal package, this device ensures robust operation and excellent thermal characteristics. It excels in both linear amplification and high-speed switching circuits. Featuring advanced process technology, the 2N3019 delivers reliable performance with low error voltage. Its fast switching speed makes it suitable for critical timing applications. With full-voltage operation and high power and current handling capabilities, it meets the demands of complex designs. This versatile transistor is an essential component for engineers and hobbyists seeking quality and efficiency.

Specifications:

• Transistor Polarity: NPN
• Collector-Base Voltage (VCBO): 140VDC
• Collector-Emitter Voltage (VCEO): 80VDC
• Emitter-Base Voltage (VEBO): 7VDC
• Continuous Collector Current (IC): 1A
• Input Capacitance (Cib): 60pF
• Output Capacitance (Cob): 12pF
• DC Current Gain (hFE): 100-300
• Operating Temperature Range: -65 - 200°C
• Power Dissipation (PD): 5W

Key features and benefits:

• Robust TO-39 metal can package for durability
• Utilizes advanced process technology for superior performance
• Achieves low error voltage for precise control
• Offers fast switching speed for dynamic applications
• Supports full-voltage operation across various circuits
• Provides high power and current handling capability
• Designed for reliable linear amplification and switching

Applications:

• General-purpose linear amplification circuits
• High-speed electronic switching applications
• Power management and control systems
• Audio amplifier stages
• Driver circuits for relays and motors

Package Includes:

*Image shown is a representation only.

Note: Contact sales(at)electroncomponents.com for bulk enquiry & get best price!