2N2219A Bipolar (BJT) Single Transistor, NPN, 40 V, 300 MHz, 400 mW - TO-39

2N2219A NPN Bipolar (BJT) Single Transistor - TO-39 Package

The 2N2219A is a high-performance NPN Bipolar Junction Transistor (BJT) designed for diverse electronic applications. Encased in a durable TO-39 metal package, it ensures excellent reliability and thermal stability. This single transistor is ideal for signal amplification and high-speed switching operations. It boasts a 40V collector-emitter voltage and a 300MHz transition frequency, delivering robust performance. With a 400mW power dissipation capability, the 2N2219A is suitable for demanding tasks. Its advanced process technology provides low error voltage and fast switching speeds. This versatile component offers full-voltage operation and high current handling. Integrate the 2N2219A for efficient and precise electronic control in your designs.

Specifications:

• Transistor Polarity: NPN
• Collector-Emitter Voltage V(br)ceo: 40V
• DC Collector Current: 800mA
• Power Dissipation Pd: 400mW
• Transistor Case Style: TO-39
• Transistor Mounting: Through Hole
• Number of Pins: 3
• Transition Frequency ft: 300MHz
• DC Current Gain hFE: 35
• Max Operating Temperature: 200°C

Key features and benefits:

• NPN Bipolar Junction Transistor (BJT)
• Durable TO-39 metal can package
• High 40V Collector-Emitter Voltage (Vce)
• Fast 300MHz Transition Frequency (ft)
• 400mW Power Dissipation (Pd)
• Advanced process technology for low error voltage
• High power and current handling capability
• Optimized for fast switching speeds

Applications:

• High-speed switching applications
• Signal amplification circuits
• General-purpose electronic designs
• Power management systems
• Oscillator and modulator circuits

Package Includes:

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